Datasheet

Section 19 EEPROM
Rev.5.00 Nov. 02, 2005 Page 349 of 500
REJ09B0027-0500
Section 19 EEPROM
The H8/3687N has an on-chip 512-byte EEPROM. The block diagram of the EEPROM is shown
in figure 19.1.
19.1 Features
• Two writing methods:
1-byte write
Page write: Page size 8 bytes
• Three reading methods:
Current address read
Random address read
Sequential read
• Acknowledge polling possible
• Write cycle time:
10 ms (power supply voltage Vcc = 2.7 V or more)
• Write/Erase endurance:
10
4
cycles/byte (byte write mode), 10
5
cycles/page (page write mode)
• Data retention:
10 years after the write cycle of 10
4
cycles (page write mode)
• Interface with the CPU
I
2
C bus interface (complies with the standard of Philips Corporation)
Device code 1010
Sleep address code can be changed (initial value: 000)
The I
2
C bus is open to the outside, so the EEPROM can be directly accessed from the outside.