Datasheet

Section 6 ROM
Rev. 8.00 Mar. 09, 2010 Page 186 of 658
REJ09B0042-0800
6.10.5 Auto-Erase Mode
1. Auto-erase mode supports only entire memory erasing.
2. Do not perform a command write during auto-erasing.
3. Confirm normal end of auto-erasing by checking I/O6. Alternatively, status read mode can also
be used for this purpose (I/O7 status polling uses the auto-erase operation end decision pin).
4. Status polling I/O6 and I/O7 pin information is retained until the next command write. As long
as the next command write has not been performed, reading is possible by enabling CE and
OE.
5. Table 6.18 shows the AC characteristics.
Table 6.18 AC Characteristics in Auto-Erase Mode
Conditions: V
CC
= 3.3 V ±0.3 V, V
SS
= 0 V, T
a
= 25°C ±5°C
Item Symbol Min Max Unit Notes
Command write cycle t
nxtc
20 — µs Figure 6.18
CE hold time t
ceh
0 — ns
CE setup time t
ces
0 — ns
Data hold time t
dh
50 — ns
Data setup time t
ds
50 — ns
Write pulse width t
wep
70 — ns
Status polling start time t
ests
1 — ms
Status polling access time t
spa
— 150 ns
Memory erase time t
erase
100 40000 ms
WE rise time t
r
— 30 ns
WE fall time t
f
— 30 ns