Datasheet

Section 16 Electrical Characteristics
Rev. 8.00 Mar. 09, 2010 Page 481 of 658
REJ09B0042-0800
16.4.6 Flash Memory Characteristics
Table 16.13 lists the flash memory characteristics.
Table 16.13 Flash Memory Characteristics
AV
CC
= 2.7 V to 3.6 V, V
SS
= AV
SS
= 0.0 V, V
CC
= 2.7 V to 3.6 V (operating voltage range in
reading), V
CC
= 3.0 V to 3.6 V (operating voltage range in programming/erasing), T
a
= –20 to
+75°C (operating temperature range in programming/erasing)
Values
Item Symbol Min Typ Max Unit
Test
Condition
Programming time (per 128 bytes)
*
1
*
2
*
4
t
P
— 7 200 ms
Erase time (per block)
*
1
*
3
*
6
t
E
— 100 1200 ms
Maximum number of reprogrammings N
WEC
1000
*
8
*
11
10000
*
9
— Times
100
*
8
*
12
10000
*
9
—
Data retention time t
DRP
10
*
10
— — Years
Programming Wait time after SWE bit setting
*
1
x 1 — — µs
Wait time after PSU bit setting
*
1
y 50 — — µs
Wait time after P bit setting
*
1
*
4
z1 28 30 32 µs 1 ≤ n ≤ 6
z2 198 200 202 µs 7 ≤ n ≤ 1000
z3 8 10 12 µs
Additional-
programming
Wait time after P bit clear
*
1
α 5 — — µs
Wait time after PSU bit clear
*
1
β 5 — — µs
Wait time after PV bit setting
*
1
γ 4 — — µs
Wait time after dummy write
*
1
ε 2 — — µs
Wait time after PV bit clear
*
1
η 2 — — µs
Wait time after SWE bit clear
*
1
θ 100 — — µs
Maximum programming count
*
1
*
4
*
5
N — — 1000 Times
Erase Wait time after SWE bit setting
*
1
x 1 — — µs
Wait time after ESU bit setting
*
1
y 100 — — µs
Wait time after E bit setting
*
1
*
6
z 10 — 100 ms
Wait time after E bit clear
*
1
α 10 — — µs
Wait time after ESU bit clear
*
1
β 10 — — µs
Wait time after EV bit setting
*
1
γ 20 — — µs
Wait time after dummy write
*
1
ε 2 — — µs
Wait time after EV bit clear
*
1
η 4 — — µs
Wait time after SWE bit clear
*
1
θ 100 — — µs
Maximum erase count
*
1
*
6
*
7
N — — 120 Times