Datasheet

Section 16 Electrical Characteristics
Rev. 8.00 Mar. 09, 2010 Page 519 of 658
REJ09B0042-0800
16.8.6 Flash Memory Characteristics
Table 16.27 Flash Memory Characteristics
Condition: AV
CC
= 2.7 V to 5.5 V, V
SS
= AV
SS
= 0.0 V, V
CC
= 2.7 V to 5.5 V (range of
operating voltage when reading), V
CC
= 3.0 V to 5.5 V (range of operating voltage
when programming/erasing), T
a
= –20°C to +75°C (range of operating temperature
when programming/erasing: product with regular specifications, product with wide-
range temperature specifications)
Values
Item Symbol Min Typ Max Unit
Test
Conditions
Programming time
*
1
*
2
*
4
t
P
— 7 200 ms/128 bytes
Erase time
*
1
*
3
*
5
t
E
— 100 1200 ms/block
Reprogramming count N
WEC
1000
*
8
10000
*
9
— times
Data retain period t
DRP
10
*
10
— — year
Programming Wait time after
SWE-bit setting
*
1
x 1 — — µs
Wait time after
PSU-bit setting
*
1
y 50 — — µs
z1 28 30 32 µs 1 ≤ n ≤ 6
z2 198 200 202 µs 7 ≤ n ≤ 1000
Wait time after
P-bit setting
*
1
*
4
z3 8 10 12 µs Additional
programming
Wait time after
P-bit clear
*
1
α 5 — — µs
Wait time after
PSU-bit clear
*
1
β 5 — — µs
Wait time after
PV-bit setting
*
1
γ 4 — — µs
Wait time after
dummy write
*
1
ε 2 — — µs
Wait time after
PV-bit clear
*
1
η 2 — — µs
Wait time after
SWE-bit clear
*
1
θ 100 — — µs
Maximum
programming
count
*
1
*
4
*
5
N — — 1000 times