Datasheet

Section 26 Electrical Characteristics
Rev. 2.00 Sep. 28, 2009 Page 850 of 870
REJ09B0429-0200
26.5 Flash Memory Characteristics
Table 26.15 lists the flash memory characteristics.
Table 26.15 Flash Memory Characteristics
Condition: VCC = 3.0 V to 3.6 V, AVCC = 3.0 V to 3.6 V, Avref = 3.0 V to AVCC, VSS = AVSS
= 0 V
Ta = 0°C to +75°C (operating temperature range for programming/erasing in regular
specifications)
Item Symbol Min. Typ. Max. Unit
Test
Conditions
Programming time*
1
*
2
*
4
t
P
⎯ 1 10 ms/128 bytes
Erase time*
1
*
2
*
4
t
E
⎯ 40 130 ms/4-kbyte block
⎯ 300 800 ms/32-kbyte block
⎯ 600 1500 ms/64-kbyte block
Programming time
(total)*
1
*
2
*
4
Σ t
P
⎯ 9.2 24 s/512 kbytes Ta = 25°C
Erase time (total)*
1
*
2
*
4
Σ t
E
⎯ 9.2 24 ⎯ ⎯
Programming and
Erase time (total)*
1
*
2
*
4
Σ t
PE
⎯ 18.4 48 ⎯ ⎯
Reprogramming
count*
5
N
WEC
100*
3
1000 ⎯ Times
Data retention time*
4
t
DRP
10 ⎯ ⎯ Years
Notes: 1. Programming and erase time depends on the data.
2. Programming and erase time do not include data transfer time.
3. This value indicates the minimum number of which the flash memory are
reprogrammed with all characteristics guaranteed. (The guaranteed value ranges from
1 to the minimum number.)
4. This value indicates the characteristics while the flash memory is reprogrammed within
the specified range (including the minimum number).
5. Reprogramming count in each erase block.