Datasheet

Section 31 Electrical Characteristics
Rev. 2.00 Aug. 20, 2008 Page 1162 of 1198
REJ09B0403-0200
31.5 Flash Memory Characteristics
Table 31.18 lists the flash memory characteristics.
Table 31.18 Flash Memory Characteristics
Conditions: VCC = 3.0 V to 3.6 V, AVCC = 3.0 V to 3.6 V, Avref = 3.0 V to AVCC, VSS =
AVSS = 0 V
Ta = 0°C to +75°C (operating temperature range for programming/erasing in regular
specifications)
Item Symbol Min. Typ. Max. Unit
Test
Conditions
Programming time*
1
*
2
*
4
t
P

1 10 ms/128 bytes
Erase time*
1
*
2
*
4
t
E

40 130 ms/4-kbyte block

300 800 ms/32-kbyte block

600 1500 ms/64-kbyte block
Programming time
(total)*
1
*
2
*
4
Σ t
P

9.2 24 s/512 kbytes Ta = 25°C
Erase time (total)*
1
*
2
*
4
Σ t
E

9.2 24
 
Programming and
Erase time (total)*
1
*
2
*
4
Σ t
PE

18.4 48
 
Reprogramming
count*
5
N
WEC
100*
3
1000

Times
Data retention time*
4
t
DRP
10
 
Years
Notes: 1. Programming and erase time depends on the data.
2. Programming and erase time do not include data transfer time.
3. This value indicates the minimum number of which the flash memory are
reprogrammed with all characteristics guaranteed. (The guaranteed value ranges from
1 to the minimum number.)
4. This value indicates the characteristics while the flash memory is reprogrammed within
the specified range (including the minimum number).
5. Reprogramming count in each erase block.