Datasheet
RL78/G13  3. ELECTRICAL SPECIFICATIONS (G: T
A = -40 to +105°C) 
Page 175 of 194R01DS0131EJ0310 Rev.3.10 
Nov 15, 2013 
3.10 Timing Specs for Switching Flash Memory Programming Modes 
(TA = −40 to +105°C, 2.4 V ≤ EVDD0 = EVDD1 ≤ VDD ≤ 5.5 V, VSS = EVSS0 = EVSS1 = 0 V) 
Parameter Symbol  Conditions  MIN. TYP. MAX. Unit 
Time to complete the 
communication for the initial 
setting after the external reset is 
released 
tSUINIT  POR and LVD reset must be released before 
the external reset is released. 
 100 ms 
Time to release the external reset 
after the TOOL0 pin is set to the 
low level 
tSU  POR and LVD reset must be released before 
the external reset is released. 
10   
μ
 s
Time to hold the TOOL0 pin at the 
low level after the external reset is 
released 
(excluding the processing time of 
the firmware to control the flash 
memory) 
t
HD  POR and LVD reset must be released before 
the external reset is released. 
1   ms 
RESET
TOOL0
<1>
<2>
<3>
t
SUINIT
723 µs + t
HD
processing
time
00H reception
(TOOLRxD, TOOLTxD mode)
t
SU
<4>
<1> The low level is input to the TOOL0 pin. 
<2> The external reset is released (POR and LVD reset must be released before the 
external reset is released.). 
<3> The TOOL0 pin is set to the high level. 
<4> Setting of the flash memory programming mode by UART reception and complete 
the baud rate setting. 
Remark t
SUINIT: Communication for the initial setting must be completed within 100 ms after the external reset is 
released during this period. 
t
SU:  Time to release the external reset after the TOOL0 pin is set to the low level 
tHD:   Time to hold the TOOL0 pin at the low level after the external reset is released (excluding the 
processing time of the firmware to control the flash memory) 










