Datasheet

R8C/28 Group, R8C/29 Group 5. Electrical Characteristics
Rev.2.10 Sep 26, 2008 Page 39 of 67
REJ03B0169-0210
NOTE:
1. V
CC = 2.7 to 3.3 V at Topr = -20 to 85°C (N version) / -40 to 85°C (D version), f(XIN) = 10 MHz, unless otherwise specified.
Table 5.22 Electrical Characteristics (3) [VCC = 3 V]
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
V
OH Output “H” voltage Except P1_0 to P1_7,
XOUT
IOH = -1 mA VCC - 0.5 − VCC V
P1_0 to P1_7 Drive capacity
HIGH
I
OH = -5 mA VCC - 0.5 − VCC V
Drive capacity
LOW
I
OH = -1 mA VCC - 0.5 − VCC V
XOUT Drive capacity
HIGH
I
OH = -0.1 mA VCC - 0.5 − VCC V
Drive capacity
LOW
I
OH = -50 µAVCC - 0.5 − VCC V
V
OL Output “L” voltage Except P1_0 to P1_7,
XOUT
IOL = 1 mA −−0.5 V
P1_0 to P1_7 Drive capacity
HIGH
I
OL = 5 mA −−0.5 V
Drive capacity
LOW
I
OL = 1 mA −−0.5 V
XOUT Drive capacity
HIGH
I
OL = 0.1 mA −−0.5 V
Drive capacity
LOW
I
OL = 50 µA −−0.5 V
V
T+-VT- Hysteresis
INT0
, INT1, INT3,
KI0
, KI1, KI2, KI3,
TRAIO, RXD0, RXD1,
CLK0, SSI, SCL,
SDA, SSO
0.1 0.3
− V
RESET
0.1 0.4 − V
I
IH Input “H” current VI = 3 V, VCC = 3V −−4.0 µA
I
IL Input “L” current VI = 0 V, VCC = 3V −−-4.0 µA
R
PULLUP Pull-up resistance VI = 0 V, VCC = 3V 66 160 500 kΩ
RfXIN Feedback resistance XIN − 3.0 − MΩ
RfXCIN Feedback resistance XCIN − 18 − MΩ
VRAM RAM hold voltage During stop mode 1.8 −−V