Datasheet

R8C/2E Group, R8C/2F Group 5. Electrical Characteristics
Rev.1.00 Dec 14, 2007 Page 26 of 39
REJ03B0222-0100
NOTE:
1. V
CC = 2.7 to 5.5 V at Topr = −20 to 85°C (N version) / −40 to 85°C (D version), unless otherwise specified.
NOTES:
1. V
CC = 2.7 to 5.5 V at Topr = 0 to 60°C, unless otherwise specified.
2. Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 100 or 10,000), each block can be erased n times. For example, if 1,024
1-byte writes are performed to block A, a 1 Kbyte block, and then the block is erased, the programming/erasure endurance
still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erase count of each block and limit the
number of erase operations to a certain number.
5. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
6. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
7. The data hold time includes time that the power supply is off or the clock is not supplied.
Table 5.5 Comparator Characteristics
(1)
Symbol Parameter Conditions
Standard
Unit
Min. Typ. Max.
V
cref Comparator reference voltage 0 − VCC−1.2 V
V
cin Comparator input voltage −0.3 − VCC+0.3 V
V
ofs Input offset voltage −− ±100 mV
T
crsp Response time −− 200 ns
Table 5.6 Flash Memory (Program ROM) Electrical Characteristics
Symbol Parameter Conditions
Standard
Unit
Min. Typ. Max.
−
Program/erase endurance
(2)
R8C/2E Group
100
(3)
−−times
R8C/2F Group
1,000
(3)
−−times
− Byte program time − 50 400 µs
− Block erase time − 0.4 9 s
t
d(SR-SUS) Time delay from suspend request until
suspend
−−97+CPU clock
× 6 cycles
µs
− Interval from erase start/restart until
following suspend request
650 −−µs
− Interval from program start/restart until
following suspend request
0 −−ns
− Time from suspend until program/erase
restart
−−3+CPU clock
× 4 cycles
µs
− Program, erase voltage 2.7 − 5.5 V
− Read voltage 2.7 − 5.5 V
− Program, erase temperature 0 − 60 °C
−
Data hold time
(7)
Ambient temperature = 55°C20 −−year