Datasheet

R8C/32D Group 5. Electrical Characteristics
REJ03B0288-0100 Rev.1.00 Feb 26, 2010
Page 30 of 42
Note:
1. 4.2 V VCC 5.5 V at Topr = 20 to 85°C (N version) / 40 to 85°C (D version), f(XIN) = 20 MHz, unless otherwise specified.
Table 5.13 Electrical Characteristics (1) [4.2 V Vcc 5.5 V]
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
V
OH Output “H”
voltage
Other than XOUT Drive capacity High VCC = 5 V IOH = 20 mA VCC 2.0 VCC V
Drive capacity Low VCC = 5 V IOH = 5 mA VCC 2.0 VCC V
XOUT VCC = 5V IOH = 200 µA1.0 VCC V
VOL Output “L”
voltage
Other than XOUT Drive capacity High VCC = 5 V IOL = 20 mA −−2.0 V
Drive capacity Low VCC = 5 V IOL = 5 mA −−2.0 V
XOUT VCC = 5V IOL = 200 µA −−0.5 V
VT+-VT- Hysteresis
INT0
, INT1, INT3,
KI0
, KI1, KI2, KI3,
TRAIO, TRBO,
TRCIOA, TRCIOB,
TRCIOC, TRCIOD,
TRCTRG,
TRCCLK, ADTRG
,
RXD0, RXD2,
CLK0, CLK2
0.1 1.2 V
RESET
0.1 1.2 V
IIH Input “H” current VI = 5 V, VCC = 5.0 V −−5.0 µA
IIL Input “L” current VI = 0 V, VCC = 5.0 V −−5.0 µA
RPULLUP Pull-up resistance VI = 0 V, VCC = 5.0 V 25 50 100 k
RfXIN Feedback
resistance
XIN 0.3 M
RfXCIN Feedback
resistance
XCIN 8 M
VRAM RAM hold voltage During stop mode 1.8 −−V