Datasheet

R01DS0190EJ0100 Rev.1.00 Page 98 of 107
Jun 19, 2013
RX111 Group 5. Electrical Characteristics
5.10 ROM (Flash Memory for Code Storage) Characteristics
Note 1. Definition of reprogram/erase cycle: The reprogram/erase cycle is the number of erasing for each block. When the reprogram/
erase cycle is n times (n = 1000), erasing can be performed n times for each block. For instance, when 4-byte programming is
performed 256 times for different addresses in 1-Kbyte block and then the entire block is erased, the reprogram/erase cycle is
counted as one. However, programming the same address for several times as one erasing is not enabled (overwriting is
prohibited).
Note 2. Characteristic when using the flash memory programmer and the self-programming library provided from Renesas Electronics.
Note 3. This result is obtained from reliability testing.
Note: • Does not include the time until each operation of the flash memory is started after instructions are executed by software.
Note: • The lower-limit frequency of FCLK is 1 MHz during programming or erasing of the flash memory. When using FCLK at below
4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set.
Note: • The frequency accuracy of FCLK should be ±3.5%. Confirm the frequency accuracy of the clock source.
Note: • Does not include the time until each operation of the flash memory is started after instructions are executed by software.
Note: • The lower-limit frequency of FCLK is 1 MHz during programming or erasing of the flash memory. When using FCLK at below
4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set.
Note: • The frequency accuracy of FCLK should be ±3.5%. Confirm the frequency accuracy of the clock source.
Table 5.46 ROM (Flash Memory for Code Storage) Characteristics (1)
Item Symbol Min. Typ. Max. Unit Conditions
Reprogramming/erasure cycle*
1
N
PEC
1000 — — Times
Data hold time After 1000 times of N
PEC
t
DRP
20*
2,
*
3
— — Year
Ta = +85°C
Table 5.47 ROM (Flash Memory for Code Storage) Characteristics (2)
: high-speed operating mode, middle-speed operating mode
Conditions: VCC = AVCC0 = 2.7 to 3.6 V, VSS = AVSS0 = VREFL0 = 0 V
Temperature range for the programming/erasure operation: T
a
= –40 to +105°C
Item Symbol
FCLK = 1 MHz FCLK = 32 MHz
Unit
Min. Typ. Max. Min. Typ. Max.
Programming time 4-byte
t
P4
— 1650 4910 — 100 761 μs
Erasure time 1-Kbyte
t
E1K
— 9.77 329 — 5.53 258 ms
Blank check time 4-byte
t
BC4
— — 5000 — — 316 μs
1-Kbyte
t
BC1K
— — 1280 — — 80.7 ms
Table 5.48 ROM (Flash Memory for Code Storage) Characteristics (3)
: middle-speed operating mode
Conditions: VCC = AVCC0 = 1.8 to 3.6 V, VSS = AVSS0 = VREFL0 = 0 V
Temperature range for the programming/erasure operation: T
a
= –40 to +105°C
Item Symbol
FCLK = 1 MHz FCLK = 8 MHz
Unit
Min. Typ. Max. Min. Typ. Max.
Programming time 4-byte
t
P4
— 1690 5380 — 290 1680 μs
Erasure time 1-Kbyte
t
E1K
— 9.84 331 — 6.04 275 ms
Blank check time 4-byte
t
BC4
— — 4980 — — 973 μs
1-Kbyte
t
BC1K
— — 1270 — — 250 ms