Datasheet
R01DS0190EJ0100 Rev.1.00 Page 99 of 107
Jun 19, 2013
RX111 Group 5. Electrical Characteristics
5.11 E2 DataFlash Characteristics
Note 1. The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 100000),
erasing can be performed n times for each block. For instance, when 1-byte programming is performed 1000 times for different
addresses in 1-byte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However,
programming the same address for several times as one erasing is not enabled (overwriting is prohibited).
Note 2. Characteristics when using the flash memory programmer and the self-programming library provided from Renesas Electronics.
Note 3. These results are obtained from reliability testing.
Note: • Does not include the time until each operation of the flash memory is started after instructions are executed by software.
Note: • The lower-limit frequency of FCLK is 1 MHz during programming or erasing of the flash memory. When using FCLK at below
4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set.
Note: • The frequency accuracy of FCLK should be ±3.5%. Confirm the frequency accuracy of the clock source.
Note: • Does not include the time until each operation of the flash memory is started after instructions are executed by software.
Note: • The lower-limit frequency of FCLK is 1 MHz during programming or erasing of the flash memory. When using FCLK at below
4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set.
Note: • The frequency accuracy of FCLK should be ±3.5%. Confirm the frequency accuracy of the clock source.
Table 5.49 E2 DataFlash Characteristics (1)
Item Symbol Min. Typ. Max. Unit Conditions
Reprogramming/erasure cycle*
1
N
DPEC
100000 1000000 — Times
Data hold time After 10000 times of N
DPEC
t
DDRP
20*
2,
*
3
— — Year
Ta = +85°C
After 100000 times of N
DPEC
5*
2,
*
3
— — Year
After 1000000 times of N
DPEC
—1*
2,
*
3
— Year
Ta = +25°C
Table 5.50 E2 DataFlash Characteristics (2)
: high-speed operating mode, middle-speed operating mode
Conditions: VCC = AVCC0 = 2.7 to 3.6 V, VSS = AVSS0 = VREFL0 = 0 V
Temperature range for the programming/erasure operation: T
a
= –40 to +105°C
Item Symbol
FCLK = 4 MHz FCLK = 32 MHz
Unit
Min. Typ. Max. Min. Typ. Max.
Programming time 1-byte
t
DP1
— 1450 1740 — 83.2 484 μs
Erasure time 1-Kbyte
t
DE1K
— 18.8 547 — 8.19 274 ms
Blank check time 1-byte
t
DBC1
— — 1130 — — 70.5 μs
1-Kbyte
t
DBC1K
— — 7590 — — 580 ms
Suspended time during erasing
t
DSED
— — 21.5 — — 12.8 μs
DataFlash STOP recovery time
t
DSTOP
5——5——μs
Table 5.51 E2 DataFlash Characteristics (3)
: middle-speed operating mode
Conditions: VCC = AVCC0 = 1.8 to 3.6 V, VSS = AVSS0 = VREFL0 = 0 V
Temperature range for the programming/erasure operation: T
a
= –40 to +105°C
Item Symbol
FCLK = 4 MHz FCLK = 32 MHz
Unit
Min. Typ. Max. Min. Typ. Max.
Programming time 1-byte
t
DP1
— 1490 2220 — 255 1130 μs
Erasure time 1-Kbyte
t
DE1K
— 18.9 498 — 7.93 280 ms
Blank check time 1-byte
t
DBC1
— — 1170 — — 212 μs
1-Kbyte
t
DBC1K
— — 7.39 — — 1.97 ms
Suspended time during erasing
t
DSED
— — 33.5 — — 25.5 μs
DataFlash STOP recovery time
t
DSTOP
720 — — 720 — — ns