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R07DS0747EJ0300 Rev.3.00 Page 1 of 9

Feb 14, 2013

Preliminary Datasheet

RJH1CV6DPK

1200V - 30A - IGBT

Application: Inverter

Features

 Short circuit withstand time (5 s typ.)

 Low collector to emitter saturation voltage

CE(sat)

= 1.8 V typ. (at I

= 30 A, V

= 15 V, Ta = 25°C)

 Built-in fast recovery diode (t

= 180 ns typ.) in one package

 Trench gate and thin wafer technology

 High speed switching

= 120 ns typ. (at V

= 600 V, V

= 15 V, I

= 30 A, Rg = 5 , Ta = 25°C, inductive load)

Outline

1. Gate

2. Collecto

3. Emitter

4. Collecto

RENESAS Package code:

PRSS0004ZE-A

(Package name:

TO-3P)

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Ratings Unit

Collector to emitter voltage / diode reverse voltage V

CES

/ V

1200 V

Gate to emitter voltage V

GES

30 V

Tc = 25°C I

60 A Collector current

Tc = 100°C I

30 A

Collector peak current ic(peak)

Note1

90 A

Collector to emitter diode forward current I

30 A

Collector to emitter diode forward peak current i

(peak)

Note1

90 A

Collector dissipation P

Note2

290 W

Junction to case thermal resistance (IGBT) j-c

Note2

0.43 °C/W

Junction to case thermal resistance (Diode) j-cd

Note2

0.69 °C/W

Junction temperature Tj 150 °C

Storage temperature Tstg –55 to +150 °C

Notes: 1. PW  10 s, duty cycle  1%

2. Value at Tc = 25C

R07DS0747EJ0300

Rev.3.00

Feb 14, 2013

Summary of content (10 pages)

PAGE 1
Preliminary Datasheet RJH1CV6DPK 1200V - 30A - IGBT Application: Inverter R07DS0747EJ0300 Rev.3.00 Feb 14, 2013 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)  Built-in fast recovery diode (trr = 180 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 120 ns typ.
PAGE 2
RJH1CV6DPK Preliminary Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Short circuit withstand time FRD forw
PAGE 3
RJH1CV6DPK Preliminary Main Characteristics Collector Dissipation vs. Case Temperature Maximum DC Collector Current vs. Case Temperature 80 Collector Current IC (A) Collector Dissipation Pc (W) 400 300 200 100 0 25 50 75 20 100 125 150 175 0 25 50 75 100 125 150 175 Case Temperature Tc (°C) Case Temperature Tc (°C) Maximum Safe Operation Area Turn-off SOA 1000 PW 100 10 10 0 μs = 10 Collector Current IC (A) 100 μs 1 0.1 0.
PAGE 4
Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) 5 4 3 IC = 60 A 30 A 2 Tc = 25°C Pulse Test 1 8 10 12 14 16 18 20 Collector to Emitter Satularion Voltage VCE(sat) (V) Preliminary Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) 5 4 IC = 60 A 3 30 A 2 Tc = 150°C Pulse Test 1 8 16 14 18 20 Typical Transfer Characteristics Collector to Emitter Saturation Voltage vs.
PAGE 5
RJH1CV6DPK Preliminary Switching Characteristics (Typical) (1) Swithing Energy Losses E (mJ) Switching Times t (ns) 1000 tf td(off) 100 td(on) tr 10 VCC = 600 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 1 1 Switching Characteristics (Typical) (2) 100 VCC = 600 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 10 Eon Eoff 1 0.
PAGE 6
RJH1CV6DPK Preliminary Typical Capacitance vs. Collector to Emitter Voltage Capacitance C (pF) Cies 1000 100 Coes 10 Cres VGE = 0 V f = 1 MHz Tc = 25°C 1 0 40 80 120 160 200 800 12 400 8 200 4 VCE 0 0 Reverse Recovery Charge Qrr (μC) Reverse Recovery Time trr (ns) 400 Tc = 150°C 200 25°C 100 0 0 40 80 120 160 3.0 2.5 2.0 1.0 0.5 25°C 0 0 40 80 120 160 200 Diode Current Slope diF/dt (A/μs) Forward Current IF (A) Reverse Recovery Current Irr (A) 0 120 1.
PAGE 7
Preliminary Normalized Transient Thermal Impedance γs (t) RJH1CV6DPK Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C 1 D=1 0.5 0.2 θj – c(t) = γs (t) • θj – c θj – c = 0.43°C/W, Tc = 25°C 0.1 0.1 0.05 0.02 0.01 1 shot pulse PDM D= PW T PW T 0.01 100 μ 1m 10 m 100 m Pulse Width 1 10 100 PW (s) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 Tc = 25°C 1 D=1 0.5 0.2 0.1 0.
PAGE 8
RJH1CV6DPK Preliminary Switching Time Test Circuit Waveform 90% VGE Diode clamp 10% L IC D.U.T 90% VCC 90% Rg 10% 10% td(off) Diode Reverse Recovery Time Test Circuit tf td(on) tr Waveform VCC IF D.U.T IF diF/dt L trr 0 Irr Rg R07DS0747EJ0300 Rev.3.00 Feb 14, 2013 0.5 Irr 0.
PAGE 9
RJH1CV6DPK Preliminary Package Dimension JEITA Package Code SC-65 Previous Code TO-3P / TO-3PV RENESAS Code PRSS0004ZE-A 15.6 ± 0.3 MASS[Typ.] 5.0g Unit: mm 4.8 ± 0.2 1.5 2.0 0.3 19.9 ± 0.2 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 Package Name TO-3P 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 5.45 ± 0.5 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 Ordering Information Orderable Part Number RJH1CV6DPK-00#T0 R07DS0747EJ0300 Rev.3.
PAGE 10
Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2.