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R07DS0161EJ0500 Rev.5.00 Page 1 of 9

Apr 19, 2012

Preliminary Datasheet

RJH60D3DPE

600V - 17A - IGBT

Application: Inverter

Features

 Short circuit withstand time (5 s typ.)

 Low collector to emitter saturation voltage

CE(sat)

= 1.6 V typ. (at I

= 17 A, V

= 15 V, Ta = 25°C)

 Built in fast recovery diode (100 ns typ.) in one package

 Trench gate and thin wafer technology

 High speed switching

= 70 ns typ. (at V

= 300 V, V

= 15 V, I

= 17 A, Rg = 5 , Ta = 25°C, inductive load)

Outline

1. Gate

2. Collecto

3. Emitter

4. Collecto

RENESAS Package code:

PRSS0004AE-B

(Package name:

LDPAK (S)-(1) )

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Ratings Unit

Collector to emitter voltage / diode reverse voltage V

CES

/ V

600 V

Gate to emitter voltage V

GES

±30 V

Tc = 25°C I

35 A Collector peak current

Tc = 100°C I

17 A

Collector peak current ic(peak)

Note1

70 A

Collector to emitter diode forward current i

17 A

Collector to emitter diode forward peak current i

(peak)

Note1

70 A

Collector dissipation P

Note2

113 W

Junction to case thermal resistance (IGBT) j-c

Note2

1.11 °C/ W

Junction to case thermal resistance (Diode j-cd

Note2

2.8 °C/ W

Junction temperature Tj 150 °C

Storage temperature Tstg –55 to +150 °C

Notes: 1. PW  10 s, duty cycle  1%

2. Value at Tc = 25C

R07DS0161EJ0500

Rev.5.00

Apr 19, 2012

Summary of content (10 pages)

PAGE 1
Preliminary Datasheet RJH60D3DPE 600V - 17A - IGBT Application: Inverter R07DS0161EJ0500 Rev.5.00 Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 70 ns typ.
PAGE 2
RJH60D3DPE Preliminary Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage VBR(CES) Min 600 Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage ICES / IR — — 5 A VCE = 600 V, VGE = 0 IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) — 4.0 — — — — — — — — — — — — — 1.6 2.0 900 60 25 37 6 16 35 16 80 ±1 6.0 2.
PAGE 3
RJH60D3DPE Preliminary Main Characteristics Power Dissipation vs. Case Temperature Maximum DC Collector Current vs. Case Temperature 40 100 Collector Current IC (A) Collector Dissipation Pc (W) 120 80 60 40 20 0 25 50 75 10 0 100 125 150 175 25 50 75 100 125 150 175 Case Temperature Tc (°C) Case Temperature Tc (°C) Maximum Safe Operation Area Turn-off SOA 80 100 PW 10 = 0μ 10 s 10 Collector Current IC (A) 1000 Collector Current IC (A) 20 0 0 μs 1 0.
PAGE 4
Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) 5 Tc = 25°C Pulse Test 4 IC = 17 A 35 A 3 2 1 4 8 16 12 20 Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) 6 Tc = 150°C Pulse Test 5 35 A 3 2 1 4 8 12 20 16 Gate to Emitter Voltage VGE (V) Transfer Characteristics (Typical) Collector to Emitter Saturation Voltage vs. Case Temparature (Typical) 60 Tc = 25°C 50 150°C 40 30 20 10 VCE = 10 V Pulse Test 0 0 4 8 12 16 20 2.
PAGE 5
RJH60D3DPE Preliminary Switching Characteristics (Typical) (1) 10 Swithing Energy Losses E (mJ) tf td(off) 100 td(on) 10 tr VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 1 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 1 0.1 Eoff Eon 0.01 1 100 10 1 100 Collector Current IC (A) (Inductive load) Switching Characteristics (Typical) (3) Switching Characteristics (Typical) (4) 1 1000 VCC = 300 V, VGE = 15 V IC = 17 A, Tc = 150°C tf 100 td(off) td(on) tr Eoff Eon 0.
PAGE 6
RJH60D3DPE Preliminary Typical Capacitance vs. Collector to Emitter Voltage Cies 1000 100 Coes Cres 10 VGE = 0 V f = 1 MHz Tc = 25°C 1 0 50 100 150 200 250 800 VCC = 300 V IC = 17 A Tc = 25°C 600 8 200 4 VCE 0 300 0 8 Tc = 150°C 100 25°C 0 0 40 80 120 160 Reverse Recovery Charge Qrr (μC) Reverse Recovery Time trr (ns) 200 50 0 40 32 1.0 VCC = 300 V IF = 17 A 0.8 0.6 Tc = 150°C 0.4 0.
PAGE 7
Preliminary Normalized Transient Thermal Impedance γs (t) RJH60D3DPE Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C D=1 1 0.5 0.2 0.1 θj – c(t) = γs (t) • θj – c θj – c = 1.11°C/W, Tc = 25°C .05 0 0.1 0.02 0.01 1 shot pulse PDM D= PW T PW T 0.01 100 μ 1m 10 m 100 m Pulse Width 1 10 100 PW (s) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 Tc = 25°C 1 D=1 0.
PAGE 8
RJH60D3DPE Preliminary Switching Time Test Circuit Waveform 90% VGE Diode clamp 10% L IC D.U.T 90% VCC 90% Rg 10% 10% td(off) Diode Reverse Recovery Time Test Circuit tf td(on) tr Waveform VCC IF D.U.T IF diF/dt L trr 0 Irr Rg R07DS0161EJ0500 Rev.5.00 Apr 19, 2012 0.5 Irr 0.
PAGE 9
RJH60D3DPE Preliminary Package Dimension JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g Unit: mm 7.8 6.6 (1.5) 10.0 2.49 ± 0.2 0.2 0.1 +– 0.1 7.8 7.0 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 1.7 Package Name LDPAK(S)-(1) 2.2 1.37 ± 0.2 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.4 ± 0.1 0.3 3.0 +– 0.5 1.3 ± 0.2 Ordering Information Orderable Part No. RJH60D3DPE-00#J3 R07DS0161EJ0500 Rev.5.
PAGE 10
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