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R07DS0175EJ0300 Rev.3.00 Page 1 of 9

Apr 19, 2012

Preliminary Datasheet

RJH60D6DPM

600V - 40A - IGBT

Application: Inverter

Features

 Short circuit withstand time (5 s typ.)

 Low collector to emitter saturation voltage

CE(sat)

= 1.6 V typ. (at I

= 40 A, V

= 15 V, Ta = 25°C)

 Built in fast recovery diode (100 ns typ.) in one package

 Trench gate and thin wafer technology

 High speed switching

= 50 ns typ. (at V

= 300 V, V

= 15 V, I

= 40 A, Rg = 5 , Ta = 25°C, inductive load)

Outline

RENESAS Package code: PRSS0003ZA-A

(Package name: TO-3PFM)

1. Gate

2. Collecto

3. Emitter

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Ratings Unit

Collector to emitter voltage / diode reverse voltage V

CES

/ V

600 V

Gate to emitter voltage V

GES

±30 V

Tc = 25°C I

80 A Collector current

Tc = 100°C I

40 A

Collector peak current ic(peak)

Note1

160 A

Collector to emitter diode forward current i

30 A

Collector to emitter diode forward peak current i

(peak)

Note1

120 A

Collector dissipation P

Note2

50 W

Junction to case thermal resistance (IGBT) j-c

Note2

2.5 °C/ W

Junction to case thermal resistance (Diode) j-cd

Note2

3.95 °C/ W

Junction temperature Tj 150 °C

Storage temperature Tstg –55 to +150 °C

Notes: 1. PW  10 s, duty cycle  1%

2. Value at Tc = 25C

R07DS0175EJ0300

Rev.3.00

Apr 19, 2012

Summary of content (10 pages)

PAGE 1
Preliminary Datasheet RJH60D6DPM 600V - 40A - IGBT Application: Inverter R07DS0175EJ0300 Rev.3.00 Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 50 ns typ.
PAGE 2
RJH60D6DPM Preliminary Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage VBR(CES) Min 600 Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage ICES / IR — — 5 A VCE = 600 V, VGE = 0 IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) — 4.0 — — — — — — — — — — — — — 1.6 1.8 2500 150 70 104 15 45 50 38 160 ±1 6.0 2.
PAGE 3
RJH60D6DPM Preliminary Main Characteristics Collector Dissipation vs. Case Temperature Maximum DC Collector Current vs. Case Temperature 100 50 Collector Current IC (A) Collector Dissipation Pc (W) 60 40 30 20 10 0 25 50 75 40 20 100 125 150 175 0 25 50 75 100 125 150 175 Case Temperature Tc (°C) Case Temperature Tc (°C) Maximum Safe Operation Area Turn-off SOA 200 PW 100 10 0μ = 10 s Collector Current IC (A) 1000 Collector Current IC (A) 60 0 0 μs 10 1 0.
PAGE 4
RJH60D6DPM Preliminary Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) Tc = 25°C Pulse Test 4 IC = 40 A 80 A 3 2 1 4 8 12 16 20 Collector Current IC (A) 5 Tc = 150°C Pulse Test 4 IC = 40 A 80 A 3 2 1 4 20 16 Typical Transfer Characteristics Collector to Emitter Saturation Voltage vs. Case Temparature (Typical) Tc = 25°C 150°C 80 40 VCE = 10 V Pulse Test 4 0 8 12 16 20 2.4 VGE = 15 V Pulse Test 2.2 IC = 80 A 2.0 1.8 40 A 1.6 20 A 1.4 1.
PAGE 5
RJH60D6DPM Preliminary Switching Characteristics (Typical) (1) Swithing Energy Losses E (mJ) Switching Times t (ns) 1000 tf td(off) 100 td(on) 10 tr VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 1 1 100 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 10 Eon 1 Eoff 0.1 0.
PAGE 6
RJH60D6DPM Preliminary Typical Capacitance vs. Collector to Emitter Voltage Cies 1000 100 Coes VGE = 0 V f = 1 MHz Tc = 25°C 10 0 50 Cres 100 150 200 250 300 800 600 12 400 8 200 0 Reverse Recovery Charge Qrr (μC) Reverse Recovery Time trr (ns) VCC = 300 V IF = 30 A Tc = 150°C 150 100 25°C 50 0 40 80 120 160 120 160 0 200 2.0 VCC = 300 V IF = 30 A 1.6 1.2 0.8 Tc = 150°C 0.
PAGE 7
Preliminary Normalized Transient Thermal Impedance γs (t) RJH60D6DPM Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C 1 D=1 0.5 0.2 θj – c(t) = γs (t) • θj – c θj – c = 2.5°C/W, Tc = 25°C 0.1 0.1 0.05 PDM 0.02 D= e 1 0.0 puls ot h 1s 0.01 100 μ 1m PW T PW T 10 m 100 m Pulse Width 1 100 10 PW (s) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 Tc = 25°C 1 D=1 0.5 0.
PAGE 8
RJH60D6DPM Preliminary Switching Time Test Circuit Waveform 90% VGE Diode clamp 10% L IC D.U.T 90% VCC 90% Rg 10% 10% td(off) Diode Reverse Recovery Time Test Circuit tf td(on) tr Waveform VCC IF D.U.T IF diF/dt L trr 0 Irr Rg R07DS0175EJ0300 Rev.3.00 Apr 19, 2012 0.5 Irr 0.
PAGE 9
RJH60D6DPM Preliminary Package Dimension RENESAS Code PRSS0003ZA-A Previous Code TO-3PFM / TO-3PFMV 15.6 ± 0.3 2.0 ± 0.3 2.7 ± 0.3 φ3.2 + 0.4 – 0.2 MASS[Typ.] 5.2g 5.0 ± 0.3 Unit: mm 5.5 ± 0.3 3.2 ± 0.3 4.0 ± 0.3 2.6 0.86 1.6 0.86 0.66 5.45 ± 0.5 + 0.2 – 0.1 21.0 ± 0.5 JEITA Package Code SC-93 5.0 ± 0.3 19.9 ± 0.3 Package Name TO-3PFM 0.2 0.9 +– 0.1 5.45 ± 0.5 Ordering Information Orderable Part No. RJH60D6DPM-00#T1 R07DS0175EJ0300 Rev.3.
PAGE 10
Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.