Datasheet

R07DS0632EJ0100 Rev.1.00 Page 1 of 8
Feb 17, 2012
Preliminary Datasheet
RJH60F6BDPQ-A0
600V - 45A - IGBT
High Speed Power Switching
Features
 Low collector to emitter saturation voltage
V
CE(sat)
= 1.35 V typ. (at I
C
= 45 A, V
GE
= 15 V, Ta = 25°C)
 Built in fast recovery diode in one package
 Trench gate and thin wafer technology
 High speed switching
t
f
= 74 ns typ. (at I
C
= 30 A, V
CE
= 400 V, V
GE
= 15 V, Rg = 5 , Ta = 25°C, inductive load)
Outline
1. Gate
2. Collecto
r
3. Emitter
4. Collecto
r
C
G
E
1
2
3
4
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
Absolute Maximum Ratings
(Tc = 25°C)
Item Symbol Ratings Unit
Collector to emitter voltage V
CES
600 V
Gate to emitter voltage V
GES
±30 V
Tc = 25 °C I
C
85 A Collector current
Tc = 100 °C I
C
45 A
Collector peak current ic(peak)
Note1
170 A
Collector to emitter diode forward peak current i
DF
(peak)
Note2
100 A
Collector dissipation P
C
297.6 W
Junction to case thermal impedance (IGBT) j-c 0.42 °C/W
Junction to case thermal impedance (Diode) j-cd 1.1 °C/W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. Pulse width limited by safe operating area.
2. PW  5 s, duty cycle  1%
R07DS0632EJ0100
Rev.1.00
Feb 17, 2012