Datasheet

RJH60F6BDPQ-A0 Preliminary
R07DS0632EJ0100 Rev.1.00 Page 3 of 8
Feb 17, 2012
Main Characteristics
180
140
160
100
120
80
60
20
40
0
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
−25 025 75 12550 100 150
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
Junction Temparature Tj ( ° C)
Typical Output Characteristics
160
120
80
40
12345
Collector Current I
C
(A)
0
0
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
Ta = 25 ° C
Pulse Test
Pulse Test
Ta = 25
° C
V
GE
= 8 V
8.4 V
9.4 V
9.6 V
8.6 V
9.8 V
8.8 V
8.2 V
9.2 V
9 V
15 V
10 V
11 V
1.0
1.8
1.4
2.2
3.0
2.6
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
45 A
15 A
30 A
I
C
= 85 A
Gate to Emitter Voltage V
GE
(V)
Typical Transfer Characteristics
Collector Current I
C
(A)
0246810
6810 12 181614 20
V
CE
= 10 V
Pulse Test
Gate to Emitter Voltage V
GE
(V)
25°C
–25°C
Tc = 75°C
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
4
5
7
6
8
−25 025 75 12550 100 150
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
1.0
1.2
1.8
1.4
2.0
1.6
V
CE
= 10 V
Pulse Test
Junction Temparature Tj ( ° C)
1 mA
I
C
= 10 mA
Maximum Safe Operation Area
1000
100
1
10
0.1
1 10010 1000
Tc = 25°C
Single pulse
I
C
= 30 A
45 A
85 A
Ta = 25 ° C
Pulse Test
V
GE
= 15 V
Pulse Test
PW = 100 μs
10 μs