Datasheet

R01DS0041EJ0150 Rev.1.50 Page 196 of 221
Oct 18, 2013
RX210 Group 5. Electrical Characteristics
5.10 ROM (Flash Memory for Code Storage) Characteristics
[Chip version A]
Note 1. Definition of reprogram/erase cycle: The reprogram/erase cycle is the number of erasing for each block. When the reprogram/
erase cycle is n times (n = 1000), erasing can be performed n times for each block. For instance, when 128-byte programming is
performed 16 times for different addresses in 2-Kbyte block and then the entire block is erased, the reprogram/erase cycle is
counted as one. However, programming the same address for several times as one erasing is not enabled (overwriting is
prohibited).
Note 2. This result is obtained from reliability testing.
[Chip versions B and C]
Note 1. Definition of reprogram/erase cycle: The reprogram/erase cycle is the number of erasing for each block. When the reprogram/
erase cycle is n times (n = 1000), erasing can be performed n times for each block. For instance, when 128-byte programming is
performed 16 times for different addresses in 2-Kbyte block and then the entire block is erased, the reprogram/erase cycle is
counted as one. However, programming the same address for several times as one erasing is not enabled (overwriting is
prohibited).
Note 2. This result is obtained from reliability testing.
Table 5.74 ROM (Flash Memory for Code Storage) Characteristics (1)
Item Symbol Min. Typ. Max. Unit Conditions
Reprogramming/erasure cycle*
1
N
PEC
1000 — — Times
Data hold time t
DRP
10*
2
— — Year
Table 5.75 ROM (Flash Memory for Code Storage) Characteristics (2)
Item Symbol Min. Typ. Max. Unit Conditions
Reprogramming/erasure cycle*
1
N
PEC
10000 — — Times
Data hold time After 1000 times
of N
PEC
t
DRP
30*
2
— — Year Ta = +85°C
After 10000 times
of N
PEC
1*
2
— — Year