Datasheet

R01DS0041EJ0150 Rev.1.50 Page 200 of 221
Oct 18, 2013
RX210 Group 5. Electrical Characteristics
[Chip version B]
Note 1. The operating frequency is 20 MHz (max.) when the voltage is in the range from 1.62 V to less than 1.8 V.
Table 5.79 ROM (Flash Memory for Code Storage) Characteristics (6)
: middle-speed operating modes 1B and 2B
Conditions: VCC = AVCC0 = 1.62 to 3.6 V, VREFH = VREFH0 = AVCC0, VSS = AVSS0 = VREFL = VREFL0 = 0 V
Temperature range for the programming/erasure operation: T
a
= –40 to +105°C
Item Symbol
FCLK = 4 MHz FCLK = 32 MHz*
1
Unit
Min. Typ. Max. Min. Typ. Max.
Programming time
when N
PEC
≤ 100 times
2 bytes t
P2
— 0.25 5.0 — 0.21 2.8 ms
8 bytes t
P8
— 0.25 5.3 — 0.21 3.0
128 bytes t
P128
— 0.92 14.0 — 0.65 8.3
Programming time
when N
PEC
> 100 times
2 bytes t
P2
— 0.31 6.2 — 0.26 3.5 ms
8 bytes t
P8
— 0.31 6.6 — 0.26 3.7
128 bytes t
P128
— 1.09 17.5 — 0.77 10.0
Erasure time
when N
PEC
≤ 100 times
2 Kbytes t
E2K
— 21.0 113.7 — 18.5 46 ms
Erasure time
when N
PEC
> 100 times
2 Kbytes t
E2K
— 25.6 220.6 — 22.5 90 (1000 times ≥
N
PEC
> 100 times),
98 (10000 times ≥
N
PEC
> 1000 times)
ms
Suspend delay time during programming
(in programming/erasure priority mode)
t
SPD
——1.7—— 1.6 ms
First suspend delay time during
programming (in suspend priority mode)
t
SPSD1
— — 220 — — 120 μs
Second suspend delay time during
programming (in suspend priority mode)
t
SPSD2
——1.7—— 1.6 ms
Suspend delay time during erasing
(in programming/erasure priority mode)
t
SED
——1.7—— 1.6 ms
First suspend delay time during erasing
(in suspend priority mode)
t
SESD1
— — 220 — — 120 μs
Second suspend delay time during
erasing (in suspend priority mode)
t
SESD2
——1.7—— 1.6 ms
FCU reset time t
FCUR
20 μs or
longer and
FCLK × 6
or greater
— — 20 μs or
longer and
FCLK × 6
or greater
——μs