Datasheet

R01DS0041EJ0150 Rev.1.50 Page 202 of 221
Oct 18, 2013
RX210 Group 5. Electrical Characteristics
[Chip versions A and C]
Table 5.82 E2 DataFlash Characteristics (3)
: high-speed operating mode, middle-speed operating mode 1A
Conditions: VCC = AVCC0 = 2.7 to 5.5 V, VREFH = VREFH0 = AVCC0, VSS = AVSS0 = VREFL = VREFL0 = 0 V
Temperature range for the programming/erasure operation: T
a
= –40 to +105°C
Item Symbol
FCLK = 4 MHz FCLK = 32 MHz
Unit
Min. Typ. Max. Min. Typ. Max.
Programming time
when N
DPEC
≤ 100 times
2 bytes t
DP2
— 0.40 4.4 — 0.16 2.0 ms
8 bytes t
DP8
— 0.45 5.1 — 0.17 2.2
Programming time
when N
DPEC
> 100 times
2 bytes t
DP2
— 0.62 6.4 — 0.25 3.0 ms
8 bytes t
DP8
— 0.69 7.5 — 0.26 3.2
Erasure time
when N
DPEC
≤ 100 times
128 bytes t
DE128
— 5.6 27.1 — 2.8 8 ms
Erasure time
when N
DPEC
> 100 times
128 bytes t
DE128
— 6.8 45.1 — 3.4 12 ms
Blank check time 2 bytes t
DBC2
——98——35μs
2 Kbytes t
DBC2K
——16——2.5ms
Suspend delay time during programming
(in programming/erasure priority mode)
t
DSPD
——0.9——0.8ms
First suspend delay time during
programming (in suspend priority mode)
t
DSPSD1
— — 220 — — 120 μs
Second suspend delay time during
programming (in suspend priority mode)
t
DSPSD2
——0.9——0.8ms
Suspend delay time during erasing
(in programming/erasure priority mode)
t
DSED
——0.9——0.8ms
First suspend delay time during erasing
(in suspend priority mode)
t
DSESD1
— — 220 — — 120 μs
Second suspend delay time during erasing
(in suspend priority mode)
t
DSESD2
——0.9——0.8ms