Operating instructions

RF Technology PA501 Page 11
4 SPECIFICATIONS 4.5 Antenna Impedance
The regulated power level can be preset over a wide guaranteed range from 25 to 120
Watts or more, depending on the available driver power.
Sensing circuits are provided to protect the output transistors from excessive
temperature. If the heat sink temperature rises to 90C, the input drive will be reduced to
prevent damage.
4.2 Physical Configuration
The power amplifier is designed to fit in an RF Technology sub-rack within a 19" rack
frame. The installed height is 4 Rack Units (RU), or 178mm, and the depth is 350mm.
The amplifier is 158.75 mm or five Eclipse units wide. The amplifier uses an extruded
aluminium heat sink with vertical fins and fan-assisted air circulation. Heatsink
temperature rise is typically 30C.
4.3 Front Panel Indicators and Test Points
4.3.1 Indicators
Power: Green LED
RF Power: Yellow LED
Over Temperature: Red LED
4.3.2 Test Points
Forward Power: Voltage to ground, 0 - 5V, uncalibrated
Reverse Power: Voltage to ground, 0 - 5V, uncalibrated
Collector Currents: Voltage to positive supply, across 22mΩ, ±10%
4.4 Electrical Specifications
4.4.1 Power Requirements
Operating Voltage: 10.5 - 16 Volts, with reduced output power below 12.5V
Current Drain: 25 Amperes maximum (20 typical) at 120 Watts and 13.5 Volts,
100mA maximum standby
Polarity: Negative Ground