Datasheet

Features
NPN Transistors
• Silicon epitaxial planar transistors
• For switching and amplifier applications
Absolute Maximum Ratings (Ta = 25°C)
Collector Base Voltage
V
CB
O
80
50
30
V
Collector Emitter Voltage
V
CE
O
65
45
30
V
Emitter Base Voltage V
EBO
6
V
Collector Current (DC) I
C
100 mA
Peak Collector Current I
CM
200 mA
Total Power Dissipation
P
tot
300 mW
Junction Temperature
T
j
150
O
C
Storage Temperature Range T
stg
- 65 to + 150
O
C
RND BC846B
RND BC847A, RND BC850 (B,C)
RND BC848C
Symbol
Un
it
Parameter
Value
RND BC846B
RND BC847A, RND BC850 (B,C)
RND BC848C
5
RND BC846B, RND BC847A
RND BC848C, RND BC850 (B,C)
Distrelec Schweiz AG, Grabenstrasse 6, 8606 Nänikon, Switzerland, T [phone], [e-mail], distrelec.com