Datasheet

NPN Transistors
Parameter Symbol Min. Typ. Max. Unit
DC Current Gain
at V
CE
= 5 V, I
C
= 2 mA
h
FE
h
FE
h
FE
110
200
420
-
-
-
220
450
800
-
-
-
Collector Base Cutoff Current
at V
CB
= 30 V
I
CBO
- - 15
nA
Collector Base Breakdown Voltage
at I
C
= 100 µA
V
(BR)CBO
V
(BR)CBO
V
(BR)CBO
80
50
30
-
-
-
-
-
-
V
V
V
Collector Emitter Breakdown Voltage
at I
C
= 2 mA
V
(BR)CEO
V
(BR)CEO
V
(BR)CEO
65
45
30
-
-
-
-
-
-
V
V
V
Collector Emitter Breakdown Voltage
at I
C
= 100 µA
V
(BR)EBO
V
(BR)EBO
6
5
-
-
-
-
V
V
Collector Emitter Saturation Voltage
at I
C
= 10 mA, I
B
= 0.5 mA
at I
C
= 100 mA, I
B
= 5 mA
V
CEsat
V
CEsat
-
-
-
-
250
600
mV
mV
Base Emitter On Voltage
at V
CE
= 5 V, I
C
= 2 mA
at V
CE
= 5 V, I
C
= 10 mA
V
BE(on)
V
BE(on)
580
-
-
-
700
720
mV
mV
Transition Frequency
at V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz
f
T
- 300 - MHz
Output Capacitance
at V
CB
= 10 V, f = 1 MHz
C
ob
- - 6 pF
Input Capacitance
at V
EB
= 0.5 V, f = 1 MHz
C
ib
- 9 - pF
Characteristics at Ta = 25°C
RND BC847A
RND BC846B, RND BC850B
RND BC848C, RND BC850C
RND BC846B
RND BC847A, RND BC850 (B,C)
RND BC848C
RND BC846B
RND BC847A, RND BC850 (B,C)
RND BC848C
RND BC846B, RND BC847A
RND BC848C, RND BC850 (B,C)
Distrelec Schweiz AG, Grabenstrasse 6, 8606 Nänikon, Switzerland, T [phone], [e-mail], distrelec.com