Datasheet

NPN Transistors
STATIC CHARACTERISTIC
I
C
(
m
A
)
,
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
4 8 12 16 20
VCE(V),COLLECTOR-EMITTER VOLTAGE
0 0.4 0.6 0.8 1.2
0.1
100
BASE-EMITTER ON VOLTAGE
f
T
(
M
H
z
)
,
C
U
R
R
E
N
T
G
A
I
N
-
B
A
N
D
W
I
D
T
H
P
R
O
D
U
C
T
1
10
DC CURRENT GAIN
V
B
E
(
s
a
t
)
,
V
C
E
(
s
a
t
)
,
(
V
)
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
1
10
0.2
20
0
10
100
I
C(mA),COLLECTOR CURRENT
1000
1000
I
B=350 A
I
B=300 A
I
B=250 A
I
B=50 A
IB=200 A
I B=150 A
IB=100 A
IB=400 A
V
CE=2V
I
C=10IB
VBE(sat)
VCE(sat)
40
60
80
100
1.0
V
BE(V),BASE-EMITTER VOLTAGE
I
C
(
m
A
)
,
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
100
h
F
E
D
C
C
U
R
R
E
N
T
G
A
I
N
VCE=5V VCE=5V
1
10
I
C(mA),COLLECTOR CURRENT
0.1
1
10
100
100
10
100
I
C(mA),COLLECTOR CURRENT
1
10
100
1000
1000
COLLECTOR OUTPUT CAPACITANCE
10
100
V
CB(V),COLLECTOR-BASE VOLTAGE
C
o
b
(
p
F
)
,
C
A
P
A
C
I
T
A
N
C
E
1
1
10
f=1MHz
1000
10000
CURRENT GAIN BANDWIDTH PRODUCT
1000
BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
10000
100
0.1
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