Datasheet

Features
PNP Transistors
• Silicon epitaxial planar transistors
• For switching and amplifier applications
Unit
Collector Base Voltage
-V
CBO
50
V
Collector Emitter Voltage
-V
CEO
V
Emitter Base Voltage
-V
EBO
5
Collector Current
-
I
C
100
mA
Peak Collector Current
-I
CM
200
mA
Total Power Dissipation
P
tot
200
mW
Junction Temperature
T
j
150
O
C
Storage Temperature Range
T
stg
- 65 to + 150
O
C
Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol
V
Value
80
45
65
RND BC856A
RND BC857 (B,C), RND BC860C
TO-236 Plastic Package
RND BC856A
RND BC857 (B,C), RND BC860C
Distrelec Schweiz AG, Grabenstrasse 6, 8606 Nänikon, Switzerland, T [phone], [e-mail], distrelec.com