Datasheet

PNP Transistors
DC Current Gain
at- V
CE
= 5 V, -I
C
= 2 mA
Collector Base Cutoff Current
at- V
CB
= 30 V
I
CBO
- 15 nA
Collector Base Breakdown Voltage
at- I
C
= 10 µA 80
50
-
-
V
V
Collector Emitter Breakdown Voltage
at- I
C
= 10 µA 80
50
-
-
V
V
Collector Emitter Breakdown Voltage
at- I
C
= 10 mA
65
45
-
-
V
V
Emitter Base Breakdown Voltage
at -I
E
= 1 µA
5 V
Collector Emitter Saturation Voltage
at- I
C
= 10 mA, -I
B
= 0.5 mA
at- I
C
= 100 mA, -I
B
= 5 mA
-
-
0.3
0.65
V
V
Base Emitter On Voltage
at- V
CE
= 5 V, -I
C
= 2 mA
at- V
CE
= 5 V, -I
C
= 10 mA
0.6
-
0.75
0.82
V
V
Current Gain Bandwidth Product
at -V
CE
= 5 V, -I
C
= 10 mA, f = 100 MHz
fT
100 - MHz
Collector Output Capacitance
at -V
CB
= 10 V, f = 1 MHz
C
ob
- 6 pF
h
FE
125
220
250
475
-
-
-
420
800
V(BR)CBO
V
(BR)CES
V(BR)CEO
V(BR)
EBO
V
CE(sat)
Characteristics at T
a
= 25°C
Symbol
Unit
Min.
Max.
VB
E(on)
-
RND BC856A
RN
D BC8
5
7
B
RND BC857C, RND BC860C
RND BC856A
RND BC857 (B,C), RND BC860C
RND BC856A
RND BC857 (B,C), RND BC860C
RND BC856A
RND BC857 (B,C), RND BC860C
Distrelec Schweiz AG, Grabenstrasse 6, 8606 Nänikon, Switzerland, T [phone], [e-mail], distrelec.com