Datasheet
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c
2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.C
ROHM : VMT3
2SC5658
ROHM : SPT
EIAJ : SC-72
2SC1740S
(1) Emitter
(2) Collector
(3) Base
3
±
0.2(15Min.)
4
±
0.2 2
±
0.2
0.45
0.5
0.45
5
(1)
(2) (3)
−
0.05
+0.15
+0.15
−
0.05
2.5
+0.4
−
0.1
3Min.
*
Denotes hFE
2SC2412K 2SC4617
ROHM :
EMT3
EIAJ : SC-75A
JEDEC : SOT-416
Abbreviated symbol: B*
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
2SC4081
Abbreviated symbol: B*
Abbreviated symbol: B*
(1) Base
(2) Emitter
(3) Collector
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
Abbreviated symbol: B*
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
0.8
0.15
0~0.1
0.3Min.
1.1
(
2
)
(
1
)
2.8
1.6
0.4
(
3
)
1.9
2.9
0.95 0.95
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
1.25
2.1
0.3
0.15
0~0.1
0.1Min.
(
3
)
0.9
0.7
0.2
0.65
(
2
)
2.0
1.3
(
1
)
0.65
(1) Emitter
(2) Base
(3) Collector
0.7
0.15
0.1Min.
0.55
0~0.1
0.2
1.6
1.6
1.0
0.3
0.8
(
2
)
0.5 0.5
(
3
)
0.2
(
1
)
0~0.1
(3)
0.32
0.8
1.2
0.13
0.5
0.22
0.4 0.4
1.2
0.80.2
0.15Max.
0.2
(
2
)
(
1
)
General purpose transistor (50V, 0.15A)
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S
Features Dimensions (Unit : mm)
1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.)
2.
Complements the 2SA1037AK / 2SA1576A /
2SA1774H / 2SA2029 / 2SA933AS.
Structure
Epitaxial planar type
NPN silicon transistor
Absolute maximum (Ta=25C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Parameter
V
CBO
V
CEO
V
EBO
P
C
Tj
Tstg
60 V
V
V
A
W
°C
°C
50
7
0.15I
C
0.2
0.15
0.3
2SC2412K, 2SC4081
2SC1740S
2SC4617, 2SC5658
150
−55 to +150
Symbol Limits Unit
Electrical characteristics (Ta=25C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Output capacitance
Parameter Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
60
50
7
−
−
120
−
−
−
−
−
−
−
−
−
−
180
2
−
−
−
0.1
0.1
390
0.4
−
3.5
VI
C
=50μA
I
C
=1mA
I
E
=50μA
V
CB
=60V
V
EB
=7V
V
CE
=6V, I
C
=1mA
I
C
/I
B
=50mA/5mA
V
CE
=12V, I
E
=−2mA, f=100MHz
V
CE
=12V, I
E
=0A, f=1MHz
V
V
μA
μA
−
V
MHz
pF
Typ. Max. Unit Conditions
Transition frequency