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2010.12 - Rev.B

High Reliability Series Serial EEPROMs

SPI BUS

BR25□□□□family

BR25S□□□ Series

●Description

BR25S

□□□ series is a serial EEPROM of SPI BUS interface method.

●Features

1) High speed clock action up to 20MHz (Max.)

2) Wait function by HOLDB terminal

3) Part or whole of memory arrays settable as read only memory area by program

4) 1.7～5.5V single power source action most suitable for battery use

5) Page write mode useful for initial value write at factory shipment

6) Highly reliable connection by Au pad and Au wire

7) For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1)

8) Auto erase and auto end function at data rewrite

9) Low current consumption

At write action (5V) : 1.5mA (Typ.)

At read action (5V) : 1.0mA (Typ.)

At standby action (5V) : 0.1μA (Typ.)

10) Address auto increment function at read action

11) Write mistake prevention function

Write prohibition at power on

Write prohibition by command code (WRDI)

Write prohibition by WPB pin

Write prohibition block setting by status registers (BP1, BP0)

Write mistake prevention function at low voltage

12) SOP8/SOP-J8/SSOP-B8/TSSOP-B8/MSOP8/TSSOP-B8J/VSON008X2030 Package

13) Data at shipment Memory array: FFh, status register WPEN, BP1, BP0 : 0

14) Data kept for 40 years

15) Data rewrite up to 1,000,000 times

●Page Write

Page 32Byte 64Byte

Part Number

BR25S320-W

BR25S640-W

BR25S128-W

BR25S256-W

●BR25S

□□□ series

Capacity Bit format

Power source

voltage

SOP8 SOP-J8 SSOP-B8 TSSOP-B8 MSOP8 TSSOP-B8J

VSON008

X2030

32Kbit 4K×8 1.7V～5.5V ● ● ● ● ● ● ●

64Kbit 8K×8 1.7V～5.5V ● ● ● ● ● ●

128Kbit 16K×8 1.7V～5.5V ● ● ● ●

256Kbit 32K×8 1.7V～5.5V ● ●

No.10001EBT08

Summary of content (19 pages)

PAGE 1
High Reliability Series Serial EEPROMs SPI BUS BR25□□□□family BR25S□□□ Series No.10001EBT08 ●Description BR25S□□□ series is a serial EEPROM of SPI BUS interface method. ●Features 1) High speed clock action up to 20MHz (Max.) 2) Wait function by HOLDB terminal 3) Part or whole of memory arrays settable as read only memory area by program 4) 1.7～5.
PAGE 2
BR25S□□□ Series Technical Note ●Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Impressed Vcc -0.3～+6.5 voltage 450(SOP8) Permissible dissipation Storage temperature range Operating temperature range Terminal voltage Pd ●Memory cell characteristics (Ta=25°C , Vcc=1.7V～5.5V) Unit Limits Parameter Number of data rewrite times *1 *1 450(SOP-J8) *2 300(SSOP-B8) *3 330(TSSOP-B8) *4 310(MSOP8) *5 310(TSSOP-B8J) *6 300(VSON008X2030) *7 Data hold years mW *1 Min. Min.
PAGE 3
BR25S□□□ Series Technical Note ●Block diagram CSB 1 8 Vcc VOLTAGE INSTRUCTION DECODE DETECTION CONTROL CLOCK GENERATION SO 2 WRITE HIGH VOLTAGE INHIBITION GENERATOR 7 HOLDB INSTRUCTION REGISTER WPB 3 STATUS REGISTER ADDRESS REGISTER 12～15bit *1 ADDRESS 6 SCK 12～15bit *1 DECODER *1 12bit: BR25S320-W 13bit: BR25S640-W 14bit: BR25S128-W 15bit: BR25S256-W 32～256K EEPROM DATA GND 4 REGISTER 8bit READ/WRITE AMP 8bit 5 SI Fig.
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BR25S□□□ Series Technical Note ●Pin assignment and description Vcc SCK HOLDB SI Terminal name Input /Output Vcc - Power source to be connected GND - All input / output reference voltage, 0V CSB Input Chip select input SCK Input Serial clock input SI Input Start bit, ope code, address, and serial data input SO Output HOLDB Input WPB Input BR25S320-W BR25S640-W BR25S128-W BR25S256-W CSB SO WPB GND Function Fig.
PAGE 5
BR25S□□□ Series Technical Note 1.5 2.5 1 2.4 SPEC 2.3 1.5 SPEC Ta=-40℃ Ta=25℃ Ta=85℃ 0.5 Ta=-40℃ Ta=25℃ Ta=85℃ 0 -0.5 -0.5 0 0.4 0.8 1.2 0 IOH[mA] Fig.9 "H" output voltage VOH1 (Vcc=2.5V) 4 5 0 6 2 Ta=-40℃ Ta=25℃ Ta=85℃ 2 1 0 1 3 4 5 6 Vcc[V] Fig.12 Current consumption at WRITE operation ICC3 (BR25S320/640-W) 1 2 3 Vcc[V] 4 5 3 Vcc[V] SPEC 4 5 6 Ta=-40℃ Ta=25℃ Ta=85℃ 100 tSCKWH [ns] SPEC SPEC 10 1 2 120 fSCK[MHz] 2 1 140 100 SPEC 4 Fig.
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BR25S□□□ Series Technical Note ●Characteristic data (The following characteristic data are Typ. Values.) 50 120 Ta=-40℃ Ta=25℃ Ta=85℃ 100 40 SPEC SPEC 60 40 20 20 10 0 1 2 3 Vcc[V] 4 5 1 SPEC 5 0 6 80 SPEC 60 SPEC SPEC 90 2 3 Vcc[V] 4 5 1 Fig.
PAGE 7
BR25S□□□ Series Technical Note ●Features ○Status registers This IC has status register. The status register expresses the following parameters of 8 bits. BP0 and BP1 can be set by write status register command. These 2 bits are memorized into the EEPROM, therefore are valid even when power source is turned off. Rewrite characteristics and data hold time are same as characteristics of the EEPROM. WEN can be set by write enable command and write disable command.
PAGE 8
BR25S□□□ Series Technical Note ●Command mode Command Contents WREN WRDI READ WRITE RDSR WRSR Ope code Write enable command Write disable command Read command Write command Read status register command Write status register command 0000 0000 0000 0000 0000 0000 0110 0100 0011 0010 0101 0001 ●Timing chart 1.
PAGE 9
BR25S□□□ Series Technical Note 3. Write command (WRITE) 0 2 0 3 0 4 0 5 6 0 7 8 0 1 A14 * 11 A12 10 9 A13 23 A1 24 A0 D7 30 ～～～～ D6 D2 D1 31 D0 ～～ SO 0 1 ～～～～ SI 0 ～～ SCK ～～～～～～ CSB High-Z ＊=Don't Care Fig.36 Product number BR25S320-W Address length A11-A0 BR25S640-W A12-A0 BR25S128-W A13-A0 BR25S256-W A14-A0 Write command By write command, data of EEPROM can be written.
PAGE 10
BR25S□□□ Series Technical Note ●WPB cancel valid area WPB is normally fixed to “H” or “L” for use, but when WPB is controlled so as to cancel write status register command, pay attention to the following WPB valid timing. While write status register command is executed, by setting WPB = “L” in cancel valid area, command can be cancelled. The area from command ope code to CSB rise at internal automatic write start becomes the cancel valid area.
PAGE 11
BR25S□□□ Series Technical Note ●Method to cancel each command ○READ, RDSR ・Method to cancel : cancel by CSB = “H”. Ope code Address Data Ope code 8 bits 16 bits 8 bits 8 bits Cancel available in all areas of read mode Data 8 bits Cancel available in all areas of rdsr mode Fig.40 READ cancel valid timing Fig.41 RDSR cancel valid timing ○WRITE、PAGE WRITE a：Ope code or address input area Cancellation is available by CSB=”H”.
PAGE 12
BR25S□□□ Series Technical Note ●I/O peripheral circuits In order to realize stable high speed operations, pay attention to the following input / output pin conditions. ○Input pin pull up, pull down resistance When to attach pull up, pull down resistance to EEPROM input pin, select an appropriate value for the microcontroller VOL, IOL with considering VIL characteristics of this IC. 1.
PAGE 13
BR25S□□□ Series Technical Note ●Equivalent circuit ○Output circuit internal signal SO internal signal Fig.48 SO output equivalent circuit ○Input circuit internal signal CSB internal signal Fig.49 CSB input equivalent circuit SCK internal signal SI Fig.51 SI input equivalent circuit Fig.50 SCK input equivalent circuit HOLDB internal signal WPB www.rohm.com internal signal Fig.53 WPB input equivalent circuit Fig.52 HOLDB input equivalent circuit © 2010 ROHM Co., Ltd. All rights reserved.
PAGE 14
BR25S□□□ Series Technical Note ●Notes on power ON/OFF ○At standby Set CSB “H”, and be sure to set SCK, SI input “L” or “H”. Do not input intermediate electric potantial. ○At power ON/OFF When Vcc rise or fall, set CSB=”H” (=Vcc). When CSB is “L”, this IC gets in input accept status (active). If power is turned on in this status, noises and the likes may cause malfunction, erroneous write or so. To prevent these, at power ON, set CSB “H”. (When CSB is in “H” status, all inputs are canceled.
PAGE 15
BR25S□□□ Series Technical Note ●Noise countermeasures ○Vcc noise (bypass capacitor) When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is recommended to attach a bypass capacitor (0.1μF) between IC Vcc and GND. At that time, attach it as close to IC as possible. And, it is also recommended to attach a bypass capacitor between board Vcc and GND.
PAGE 16
BR25S□□□ Series Technical Note ●Ordering part number B R 2 Part No. 5 S BUS Type 25：SPI 2 Operating temperature range S:-40℃~+85℃ 5 6 F V T Capacity Package 320=32K 640=64K 128=128K 256=256K F:SOP8 FJ:SOP-J8 FV:SSOP-B8 FVT:TSSOP-B8 FVM:MSOP8 FVJ:TSSOP-B8J NUX:VSON008X2030 - W W-Cell E 2 Packaging and forming specification E2: Embossed tape and reel TR: Embossed tape and reel ●Package specifications SOP8 5.0±0.2 (MAX 5.
PAGE 17
BR25S□□□ Series Technical Note ●Package specifications (Continue) SSOP-B8 3.0±0.2 (MAX 3.35 include BURR) 0.3MIN 4.4 ± 0.2 6.4 ± 0.3 876 5 Tape Embossed carrier tape Quantity 2500pcs Direction of feed E2 The direction is the 1pin of product is at the upper left when you hold ( reel on the left hand and you pull out the tape on the right hand ) 1.15 ± 0.1 1 23 4 0.15±0.1 0.1 S 0.1 0.22±0.10 (0.52) 0.08 M 0.
PAGE 18
BR25S□□□ Series Technical Note ●Package specifications (Continue) MSOP8 2.8±0.1 4.0±0.2 8 7 6 5 0.6±0.2 +6° 4° −4° 0.29±0.15 2.9±0.1 (MAX 3.25 include BURR) Tape Embossed carrier tape Quantity 3000pcs Direction of feed TR The direction is the 1pin of product is at the upper right when you hold ( reel on the left hand and you pull out the tape on the right hand ) 1 2 3 4 1PIN MARK 1pin +0.05 0.145 −0.03 0.475 +0.05 0.22 −0.04 0.08±0.05 0.75±0.05 0.
PAGE 19
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