Datasheet

Technical Note
2/18
BR25S□□□ Series
www.rohm.com
2010.12 - Rev.B
© 2010 ROHM Co., Ltd. All rights reserved.
●Absolute maximum ratings (Ta=25°C) ●Memory cell characteristics (Ta=25°C , Vcc=1.7V～5.5V)
Parameter Symbol Limits Unit
Impressed
voltage
Vcc -0.3～+6.5 V
Permissible
dissipation
Pd
450(SOP8)
*1
mW
450(SOP-J8)
*2
300(SSOP-B8)
*3
330(TSSOP-B8)
*4
310(MSOP8)
*5
310(TSSOP-B8J)
*6
300(VSON008X2030)
*7
Storage
temperature
range
Tstg - 6 5 ～+125
℃
Operating
temperature
range
Topr -40～+85
℃
Terminal
voltage
－ -0.3～Vcc+0.3
V
* When using at Ta=25℃ or higher, 4.5mW(*1, *2),
3.0mW(*3, *7),3.3mW(*4), 3.1mW(*5, *6) to be reduced per 1℃
●Electrical characteristics (Unless otherwise specified, Ta=-40～+85°C, Vcc=1.7～5.5V)
Parameter Symbol
Limits
Unit Conditions
Min. Typ. Max.
“H” Input Voltage1 VIH1 0.7xVcc － Vcc+0.3 V 1.7≦Vcc≦5.5V
“L” Input Voltage1 VIL1 -0.3 － 0.3xVcc V 1.7≦Vcc≦5.5V
“L” Output Voltage1 VOL1 0 － 0.4 V IOL=2.1mA, 2.5≦Vcc<5.5V
“L” Output Voltage2 VOL2 0 － 0.2 V IOL=1.0mA, 1.7≦Vcc<2.5V
“H” Output Voltage1 VOH1 Vcc-0.2 － Vcc V IOH=-0.4mA, 2.5V≦Vcc<5.5V
“H” Output Voltage2 VOH2 Vcc-0.2 － Vcc V IOH=-100µA, 1.7≦Vcc<2.5V
Input Leakage Current ILI -1 － 1 μAV
IN
=0～Vcc
Output Leakage Current ILO -1 － 1 μAV
OUT
=0～Vcc, CSB=Vcc
Operating Current Write
ICC1 － －
0.5
*1
mA
Vcc=1.8V, fSCK=5MHz, tE/W=5ms
Byte Write, Page Write, Write Status register
1
*2
ICC2 － －
1
*1
mA
Vcc=2.5V, fSCK=10MHz, tE/W=5ms
Byte Write, Page Write, Write Status register
1.5
*2
ICC3 － －
2
*1
mA
Vcc=5.5V, fSCK=20MHz, tE/W=5ms
Byte Write, Page Write, Write Status register
3
*2
Operating Current Read
ICC4 － － 1 mA
Vcc=1.8V, fSCK=5MHz, SO=OPEN
Read, Read Status Register
ICC5 － － 1 mA
Vcc=2.5V, fSCK=2MHz, SO=OPEN
Read, Read Status Register
ICC6 － － 1.5 mA
Vcc=2.5V, fSCK=5MHz, SO=OPEN
Read, Read Status Register
ICC7 － － 2 mA
Vcc=2.5V, fSCK=10MHz, SO=OPEN
Read, Read Status Register
ICC8 － － 2 mA
Vcc=5.5V, fSCK=5MHz, SO=OPEN
Read, Read Status Register
ICC9 － － 4 mA
Vcc=5.5V, fSCK=10MHz, SO=OPEN
Read, Read Status Register
ICC10 － － 8 mA
Vcc=5.5V, fSCK=20MHz, SO=OPEN
Read, Read Status Register
Standby Current ISB － － 2 μA
Vcc=5.5V, SO=OPEN
CSB=HOLDB=WPB=Vcc, SCK=SI=Vcc or GND
*1 BR25S320/640-W
*2 BR25S128/256-W
○ Radiation resistance design is not made
Parameter
Limits
Unit
Min. Min. Min.
Number of
data rewrite times
*1
1,000,000 － － Time
Data hold years
*1
40 － － Year
*1 Not 100% TESTED
●Recommended action conditions
Parameter Symbol Limits Unit
Power source voltage V
CC
1.7～5.5
V
Input voltage V
IN
0～Vcc
●Input / output capacity (Ta=25°C, frequency=5MHz)
Parameter Symbol Conditions Min. Max. Unit
Input capacity
*1
C
IN
V
IN
=GND － 8
pF
Output capacity
*1
C
OUT
V
OUT
=GND － 8
*1 Not 100% TESTED.