Datasheet

Datasheet
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EMB11 / UMB11N / IMB11A
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
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Outline
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Features
1) Built-In Biasing Resistors, R
1
= R
2
= 10kW.
2) Two DTA114E chips in one package.
3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
4) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
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Inner circuit
of the input. They also have the advantage of
completely eliminating parasitic effects.
5) Only the on/off conditions need to be set for
operation, making the circuit design easy.
6) Lead Free/RoHS Compliant.
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Application
Inverter circuit, Interface circuit, Driver circuit
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Packaging specifications
R
1
10kW
R
2
10kW
Parameter
Tr1 and Tr2
V
CC
-50V
I
C(MAX.)
-100mA
Part No.
Package
size
(mm)
8,000
Basic
ordering
unit (pcs)
Reel size
(mm)
EMB11
1616
180
3,000
IMB11A
3,000
UMB11N
2021
180
2928
180
EMT6
UMT6
SMT6
EMB11
(SC-107C)
IMB11A
SOT-457 (SC-74)
UMB11N
SOT-353 (SC-88)
EMB11 / UMB11N
IMB11A
OUT
(6)
(2)
IN
(1)
GND
(3)
OUT
IN
(5)
GND
(4)
OUT
(4)
(2)
IN
(3)
GND
(1)
OUT
IN
(5)
GND
(6)
(6)
(5)
(4)
(1)
(2)
(3)
(4)
(5)
(6)
(3)
(2)
(1)
(6)
(5)
(4)
(1)
(2)
(3)
1/7
2012.06 - Rev.B

Summary of content (8 pages)