Datasheet

EMD12 / UMD12N
Transistors
Rev.A 1/3
Power management
(dual digital transistors)
EMD12 / UMD12N
zFeatures
1) Both the DTA144E and DTC144E in a EMT or UMT
package.
zEquivalent circuit
(4) (5) (6)
(1)(2)(3)
R 1
DTr2
DTr1
R
2
R 2
R 1
R1=47kΩ
R
2=47kΩ
zPackage, marking, and packaging specifications
Type EMD12
EMT6
D12
T2R
8000
UMD12N
UMT6
D12
TR
3000
Package
Marking
Code
Basic ordering unit (pieces)
zAbsolute maximum ratings (Ta=25°C)
Parameter
∗1 120mW per element must not be exceeded.
PNP type negative symbols have been omitted
Symbol
V
CC
V IN
I O
I C
Pd
Tj
Tstg
Limits
50
40
−10
100
30
150(TOTAL)
150
−55
~ +150
Unit
V
V
mA
mA
mW
∗1
°C
°C
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
zExternal dimensions (Units : mm)
Each lead has same dimensions
ROHM : EMT6
EMD12
UMD12N
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
0~0.1
(
6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
(
1
)
0.65
(
4
)
(
3
)
(
2
)
(
5
)
0.22
1.2
1.6
(
1
)
(
2
)(
5
)
(
3
)
(
6
)
(
4
)
0.13
0.5
0.5
0.5
1.0
1.6
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Input resistance
V
I (off)
V I (on)
V O (on)
I I
I O (off)
G I
f T
R 1
−
3
−
−
−
68
32.9
0.8
−
−
0.1
−
−
−
47
−
−
1
0.5
−
0.3
0.18
0.5
−
61.1
1.2
V
V
V
mA
µA
−
MHz
kΩ
∗
R 2 / R 1
−
250
−
−
V
CC =5/−5V, I O =100/−100µA
V
O =0.3/−0.3V, I O =2/−2mA
I
O =10/−10mA, I I =0.5/−0.5mA
V
I =5/−5V
V
CC =50/−50V, V I =0V
I
O =5/−5mA, V O =5/−5V
V
CE =10/−10V, I E =−5/5mA, f=100MHz
∗Transition frequency of the device. PNP type negative symbols have been omitted
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Resistance ratio