Datasheet

ManualsBrandsROHM SEMICONDUCTOR ManualsBJTs & IGBTsBipolar Transistor

EMT1 / UMT1N / IMT1A

Transistors

Rev.C 1/3

General Purpose Transistor

(Isolated Dual Transistors)

EMT1 / UMT1N / IMT1A

zFeatures

1) Two 2SA1037AK chips in a EMT or UMT or SMT

package.

2) Mounting possible with EMT3 or UMT3 or SMT3

automatic mounting machines.

3) Transistor elements are independent,

eliminating interference.

zStructure

Epitaxial planar type

PNP silicon transistor

zEquivalent circuit

EMT1 / UMT1N IMT1A

(3) (2) (1)

(4) (5) (6)

(3) (2) (1)

The following characteristics apply to both

1 and Tr2.

zAbsolute maximum ratings (Ta = 25°C)

Parameter Symbol

CBO

CEO

EBO

Tstg

EMT1, UMT1N

IMT1A

Limits

−60

−50

−6

−150

150

−55 to +150

150 (TOTAL)

300 (TOTAL)

Unit

°C

∗

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Junction temperature

Storage temperature

Collector

power

dissipation

∗1 120mW per element must not be exceeded.

∗2 200mW per element must not be exceeded.

zDimensions (Unit : mm)

ROHM : EMT6

EMT1

ROHM : UMT6

EIAJ : SC-88

UMT1N

(6) (5) (4)

(1) (2) (3)

(6) (5) (4)

(1) (2) (3)

(4) (5) (6)

(3) (2) (1)

ROHM : SMT6

EIAJ : SC-74

IMT1A

Abbreviated symbol : T1

Each lead has same dimensions

Summary of content (4 pages)

PAGE 1
EMT1 / UMT1N / IMT1A Transistors General Purpose Transistor (Isolated Dual Transistors) EMT1 / UMT1N / IMT1A zDimensions (Unit : mm) zFeatures 1) Two 2SA1037AK chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference.
PAGE 2
EMT1 / UMT1N / IMT1A Transistors zElectrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO −60 − − V IC = −50µA Collector-emitter breakdown voltage BVCEO −50 − − V IC = −1mA Emitter-base breakdown voltage BVEBO −6 − − V IE = −50µA Collector cutoff current ICBO − − −0.1 µA VCB = −60V Emitter cutoff current IEBO − − −0.1 µA VEB = −6V VCE(sat) − − −0.
PAGE 3
EMT1 / UMT1N / IMT1A lC/lB = 10 -0.5 -0.2 Ta = 100°C 25°C -40°C -0.1 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) Ta = 25°C VCE = -12V 500 200 100 50 0.5 1 2 5 10 20 50 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs.
PAGE 4
Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered.