Datasheet

EMT2 / UMT2N / IMT2A
Transistors
Rev.A 1/2
General purpose (dual transistors)
EMT2 / UMT2N / IMT2A
zFeatures
1) Two 2SA1037AK chips in a EMT or UMT or SMT package.
zEquivalent circuits
(1)(2)(3)
(4) (5) (6)
(6)(5)(4)
(3) (2) (1)
EMT2 / UMT2N
IMT2A
Tr
2
Tr1 Tr1
Tr2
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
V
CBO
V CEO
V EBO
I C
P C
Tj
Tstg
Limits
−60
−50
−6
−150
300(TOTAL)
150(TOTAL)
EMT2 / UMT2N
IMT2A
150
−55
to +150
Unit
V
V
V
mA
mW
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
∗1
∗2
zPackage, marking, and packaging specifications
EMT2
EMT6
T2
T2R
8000
IMT2A
SMT6
T2
T108
3000
UMT2N
UMT6
T2
TR
3000
Type
Package
Marking
Code
Basic ordering unit (pieces)
zExternal dimensions (Unit : mm)
ROHM : EMT6
EMT2
ROHM : UMT6
EIAJ : SC-88
UMT2N
ROHM : SMT6
EIAJ : SC-74
IMT2A
0.22
1.2
1.6
(
1
)
(
2
)(
5
)
(
3
)
(
6
)
(
4
)
0.13
0.5
0.5
0.5
1.0
1.6
Each lead has same dimensions
0.1Min.
0~0.1
(
6
)
2.0
1.3
0.9
0.15
0.7
2.1
0.65
0.2
1.25
(
1
)
0.65
(
4
)
(
3
)
(
2
)
(
5
)
Each lead has same dimensions
(
6
)(
5
)(
4
)
0.3Min.
0.15
0.3
1.1
0.8
0~0.1
(
3
)
2.8
1.6
1.9
2.9
0.95
(
2
)
0.95
(
1
)
Each lead has same dimensions
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max.
Unit
Conditions
Transition frequency
BV
CBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
−60
−50
−6
−
−
−
120
−
−
−
−
−
−
−
−
140
−
−
−
−0.1
−0.1
−0.5
560
−
V
V
V
µA
µA
V
−
MHz
∗
Cob
−
45pF
I
C=−50µA
I
C=−1mA
I
E=−50µA
V
CB=−60V
V
EB=−6V
V
CE=−12V, IE=2mA, f=100MHz
V
CE=−12V, IE=0A, f=1MHz
I
C/IB=−50mA/−5mA
V
CE=−6V, IC=−1mA
∗Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance