Datasheet

IMX8
Transistors
Rev.A 1/2
General purpose (dual transistors)
IMX8
zFeatures
1) Two 2SC3906K chips in an SMT package.
2) High breakdown voltage.
zPackage, marking, and packaging specifications
IMX8
SMT6
X8
T108
3000
Part No.
Package
Marking
Code
Basic ordering unit (pieces)
zExternal dimensions (Unit : mm)
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
(
6
)
(
5
)
(
4
)
0.3Min.
0.15
0.3
1.1
0.8
0~0.1
(
3
)
2.8
1.6
1.9
2.9
0.95
(
2
)
0.95
(
1
)
zEquivalent circuit
(1)(2)(3)
(4)
Tr
2
Tr 1
(5) (6)
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
V
CBO
V CEO
V EBO
I C
Pc
Tj
Tstg
Limits
120
120
5
50
150
−55 to +150
Unit
V
V
V
mA
mW
∗
°C
°C
300(TOTAL)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
∗ 200mW per element must not be exceeded.
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
CBO
BV CEO
BV EBO
I CBO
I EBO
h FE
120
120
5
−
−
180
−
−
−
−
−
−
−
−
−
0.5
0.5
820
V
V
V
µA
µA
−
Transition frequency f
T − 140 − MHz
I
C =50µA
I
C =1mA
I
E =50µA
V
CB =100V
V
EB =4V
V
CE(sat) −−0.5 V I C /I B =10mA/1mA
V
CE =6V, I C =2mA
V
CE =12V, I E = −2mA, f=100MHz
∗Transition frequency of the device
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
∗