Datasheet

Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Schottky Barrier Diode
RB051L-40
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
General rectification
Features
1)Small power mold type.（PMDS）
2)Low VF
3)High reliability
Construction
Silicon epitaxial planar Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
V
RM
V
V
R
V
Io A
I
FSM
A
Tj °C
Tstg °C
Electrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Conditions
V
F
1
- - 0.35 V I
F
=1.0A
V
F
2
- - 0.45 V I
F
=3.0A
I
R
1
--1mAV
R
=20V
I
R
2
- - 150 μA
V
R
=15V
Forward voltage
Reverse current
Storage temperature
40 to 125
(*1) Mounted on epoxyboard. 180°Half sine wave
Parameter
Forward current surge peak （60Hz・1cyc） 70
Junction temperature 125
Reverse voltage (DC) 20
Average rectified forwarfd current 3
Parameter Limits
Reverse voltage (repetitive peak) 40
PMDS
2.0
4.2
2.0
4.0±0.12.9±0.1
4.0±0.1
2.0±0.05
φ1.55±0.05
5.5±0.05
1.75±0.1
12±0.2
φ1.55
9.5±0.1
0.3
5.3±0.1
0.05
2.8MAX
ROHM : PMDS
JEDEC : SOD-106
①
Manufacture Date
②
① ②
13
0.1±0.02
0.1
2.6±0.2
2.0±0.2
5.0±0.3
1.2±0.3
4.5±0.2
1.5±0.2
1/3 2011.04 - Rev.B