Datasheet

Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Schottky Barrier Diode
RB160M-60
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
General rectification
Features
1)Small power mold type.（PMDU）
2)Low I
R
3)High reliability
Construction
Silicon epitaxial planar
Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
V
RM
V
V
R
V
Io A
I
FSM
A
Tj
C
Tstg
C
Electrical characteristic (Ta=25°C)
Symbol Min. Typ. Max. Unit
V
F
- 0.49 0.55 V I
F
=1.0A
I
R
- 7.0 50 μAV
R
=60V
Ct - 40 - pF
V
R
=10V , f=1MHz
Forward voltage
Reverse current
Capacitance between terminals
Conditions
Storage temperature
40 to 150
(*1)Mounting on epoxi board. 180°Half sine wave
Parameter
Forward current surge peak （60Hz・1cyc） 30
Junction temperature 150
Reverse voltage (DC) 60
Average rectified forward current 1
Parameter Limits
Reverse voltage (repetitive) 60
PMDU
1.2
3.05
0.85
4.0±0.1
2.0±0.05
φ1.55±0.05
1.81±0.1
4.0±0.1 φ1.0±0.1
3.5±0.05 1.75±0.1
8.0±0.2
0.25±0.05
1.5MAX
3.71±0.1
ROHM : PMDU
JEDEC :SOD-123
Manufacture Date
0.9±0.1
1.6±0.1
2.6±0.1
3.5±0.2
0.8±0.1
0.1±0.1
0.05
①
1/3 2011.04 - Rev.E