Datasheet

Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Schottky Barrier Diode
RB461F
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
Low power rectification
Features
1)Small mold type. (UMD3)
2)Low V
F.
3)High reliability
Construction
Silicon epitaxial planer Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
V
RM
V
V
R
V
Io A
I
FSM
A
Tj °C
Tstg °C
Electrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit
V
F
- - 0.49 V I
F
=700mA
I
R
- - 200 μA
V
R
=20V
Parameter
Forward voltage
Reverse current
Conditions
Storage temperature
40 to 125
Forward current surge peak (60Hz・1cyc) (*1) 3
Junction temperature 125
Reverse voltage (DC) 20
Average rectified forward current 0.7
Parameter Limits
Reverse voltage (repetitive) 25
UMD3
0.9MIN.
1.6
0.65
1.3
0.8MIN
4.0±0.1
4.0±0.1
2.0±0.05
φ1.55±0.05
3.5±0.05
1.75±0.1
8.0±0.2
φ0.5±0.05
2.4±0.1
2.25±0.1
0
5.5±0.2
1.25±0.1
2.4±0.1
0.3±0.1
0～0.1
ROHM : UMD3
JEITA : SC-70
JEDEC : SOT-323
dot (year week factory)
2.0±0.2
2.1±0.1
1.25±0.1
0.3±0.1
各リードとも
同寸法
(3)
1.3±0.1
（0.65）
（0.65）
(2) (1)
0.15±0.05
0.9±0.1
0.7±0.1
0.1Min
0～0.1
Each lead has same dimension
1/3 2011.04 - Rev.C