Datasheet

RB481K
Diodes
Rev.C 1/3
Schottky barrier diode
RB481K
zApplications
z
External dimensions (Unit : mm)
z
Land size figure (Unit : mm)
Low current rectification
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㪇㪅㪎
㪇㪅㪐㪤㪠㪥㪅
㪇㪅㪇㪌
㪈㪅㪊
㪇㪅㪍
㪈㪅㪍
zFeatures
1) Ultra small mold type. (UMD4)
2) Low V
F
3) High reliability.
z
Construction
z
Structure
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㪡㪜㪠㪫㪘㩷㪑㩷㪪㪚㪄㪏㪉
㪡㪜㪛㪜㪚㩷㪑㩷㪪㪦㪫㪄㪊㪋㪊
㪻㫆㫋㩷㩿㫐㪼㪸㫉㩷㫎㪼㪼㫂㩷㪽㪸㪺 㫋㫆㫉㫐㪀
㪈㪧㫀㫅㩷㪤㪸㫉㫂
r
r
r
r


ฦ࡝࡯࠼ߣ߽
หኸᴺ


Silicon epitaxial planar
z
Taping specification (Unit : mm)
z
Absolute maximum ratings (Ta=25qC)
z
Electrical characteristics (Ta=25qC)
㩷
Symbol Min. Typ. Max. Unit
V
F
1
- - 0.28 V
I
F
=1mA
V
F
2
- - 0.33 V
I
F
=10mA
V
F
3
- - 0.43 V
I
F
=100mA
V
F
4
- - 0.50 V
I
F
=200mA
Reverse current
I
R
--30μA
V
R
=10V
Conditions
Forward voltage
Parameter
Symbol Unit
V
RM
V
V
R
V
Io mA
I
FSM
A
Tj
㷄
Tstg
㷄
Limits
30
200
Parameter
Reverse voltage (DC)
Average rectified forward currenẗ́*1ͅ
30
orward current surge peak 䋨60Hz䊶1cyc䋩䋨*1䋩 1
125
-40 to +125
Reverse voltage (repetitive peak)
F
Junction temperature
Storage temperature
(*1) Rating of per diode
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r


/KP
㨪
Eac h lead has same dim ension
r
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㪋㪅㪇㫧㪇㪅㪈
㪉㪅㪇㫧㪇㪅㪇㪌
㱢㪈㪅㪌㪌㫧㪇㪅㪇㪌
㪊㪅㪌㫧㪇㪅㪇㪌
㪈㪅㪎㪌㫧㪇㪅㪈
㪏㪅㪇㫧㪇㪅㪉
㪈㪅㪈㪌㫧㪇㪅㪈
㪉㪅㪋㫧㪇㪅㪈
㱢㪈㪅㪈㫧㪇㪅㪈
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㪇㪅㪊㫧㪇㪅㪈
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㪌㪅㪌㫧㪇㪅㪉
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