Datasheet

ManualsBrandsROHM SEMICONDUCTOR ManualsDiodesSchottky Diode

RB521G-30

Diodes

Rev.A 1/3

Schottky barrier diode

RB521G-30

zApplication zExternal dimensions (Unit : mm) zLand size figure (Unit : mm)

Rectifying small power

VMD2

0.5

1.2

0.5

zFeatures

1) Ultra small mold type. (VMD2)

Low V

3) High reliability

zConstruction

Silicon epitaxial planer zStructure

ROHM : VMD2

dot (year week factory)

0.13±0.03

0.5±0.05

0.27±0.03

0.6±0.05

1.0±0.05

1.4±0.05

zTaping specification (Unit : mm)

0.76±0.1

4±0.1

2±0.05

φ1.5+0.1

3.5±0.05

1.75±0.1

8.0±0.3

0.1

0.18±0.05

0.65±0.05

φ0.5

0.4

2±0.05

0.3

1.11±0.05

2.1±0.1

zAbsolute maximum ratings (Ta=25°C)

Symbol Unit

Io mA

FSM

℃

Tstg

℃

Parameter

Reverse voltage (DC)

verage rectified forward current

-40 to +125

Limits

100

ward current surge peak

（

60Hz

・

1cyc

）

500

ion temperature

torage temperature

125

For

Junct

zElectrical characteristics (Ta=25°C)

Symbol Min. Typ. Max. Unit

- - 0.35 V

=10mA

--10µA

=10V

Reverse current

Parameter

ward voltage

Conditions

For

Summary of content (4 pages)

PAGE 1
RB521G-30 Diodes Schottky barrier diode RB521G-30 zApplication Rectifying small power zExternal dimensions (Unit : mm) zLand size figure (Unit : mm) 0.5 0.13±0.03 0.5 0.6±0.05 1.0±0.05 1.4±0.05 1.2 zFeatures 1) Ultra small mold type. (VMD2) 2) Low VF 3) High reliability VMD2 zConstruction Silicon epitaxial planer 0.27±0.03 0.5±0.05 zStructure ROHM : VMD2 dot (year week factory) zTaping specification (Unit : mm) 0.18±0.05 φ1.5+0.1 0 2±0.05 3.5±0.05 0.4 2.1±0.1 1.11±0.05 φ0.5 4±0.1 0.
PAGE 2
RB521G-30 Diodes zElectrical characteristic curves (Ta=25°C) Ta=-25℃ 1 Ta=25℃ 0.1 0.01 0.001 Ta=75℃ 100 Ta=25℃ 10 1 Ta=-25℃ 0.1 0.01 0 100 200 300 400 500 600 10 Ta=25℃ IF=10mA n=30pcs 290 0 280 270 260 15 10 AVE:2.017uA 5 AVE:3.90A 5 0 8.3ms 8.3ms 1cyc 5 10 5 1 Mounted on epoxy board IF=100mA DC 0.06 Sin(θ＝180) 0.04 D=1/2 0.04 DC Sin(θ＝180) 0 0 TIME:t(s) Rth-t CHARACTERISTICS 0.06 0.02 300us 1000 100 0.08 D=1/2 0.
PAGE 3
RB521G-30 Diodes 0.3 0A 0V 0.2 DC Io t T VR D=t/T VR=15V Tj=125℃ D=1/2 0.1 Sin(θ＝180) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.3 0A 0V 0.2 Io t DC T VR D=t/T VR=15V Tj=125℃ D=1/2 0.1 Sin(θ＝180) 0 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.
PAGE 4
Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered.