Datasheet

RB521G-30
Diodes
Rev.A 2/3
zElectrical characteristic curves (Ta=25°C)
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(uA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISRESION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
REVERSE POWER
DISSIPATION:P
R
(W)
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
0.001
0.01
0.1
1
10
100
1000
0 100 200 300 400 500 600
0.01
0.1
1
10
100
1000
10000
0102030
1
10
100
0 5 10 15 20
f=1MHｚ
250
260
270
280
290
300
AVE:270.2mV
Ta=25℃
IF=10mA
n=30pcs
0
5
10
15
20
25
30
Ta=25℃
VR=10V
n=30pcs
AVE:2.017uA
10
11
12
13
14
15
16
17
18
19
20
AVE:17.34pF
Ta=25℃
f=1MHz
VR=0V
n=10pcs
0
5
10
1 10 100
t
Ifsm
0
5
10
15
20
AVE:3.90A
8.3ms
Ifsm
1cyc
0
5
10
1 10 100
8.3ms
Ifsm
1cyc
8.3ms
10
100
1000
0.001 0.1 10 1000
Rth(j-a)
Rth(j-c)
1ms
IM=10mA IF=100mA
300us
time
Mounted on epoxy board
0
0.02
0.04
0.06
0.08
0.1
00.10.2
0
0.02
0.04
0.06
0.08
0.1
01020
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
Ta=125℃
Ta=25℃
Ta=75℃
DC
D=1/2
Sin(θ＝180)
Sin(θ＝180)
DC
D=1/2
30