Datasheet

ManualsBrandsROHM SEMICONDUCTOR ManualsDiodesSchottky Diode

RB521ZS-30

Diodes

Rev.C 1/3

Schottky Barrier Diode

RB521ZS-30

zApplications

General rectification

zFeatures

Ultra small mold type.（GMD2）

2) Low V

3) High reliability

zConstruction

Silicon epitaxial planar

zDimensions (Unit : mm)

zLand size figure (Unit : mm)

zStructure

zTaping specifications (Unit : mm)

zAbsolute maximum ratings (Ta=25°C)

Symbol Unit

Io mA

FSM

℃

Tstg

℃

Forward current surge peak

（

60Hz

・

1cyc

）

500

150Junction temperature

Storage temperature

Parameter

Reverse voltage (DC)

Average rectified forward current

-40 to +150

Limits

100

zElectrical characteristic (Ta=25°C)

Symbol Min. Typ. Max. Unit

Forward voltage

--0.37V

=10mA

--7µA

=10V

Reverse current

Parameter Conditions

GMD2

0.31

0.38

0.23

0.6±0.05

0.3±0.05

0.3±0.03

0～0.03

0.38±0.03

0.27±0.03

0.57±0.05

0.19±0.03

JEDEC : -

ROHM : GMD2

JEITA : -

dot(year week factory)

Summary of content (4 pages)

PAGE 1
RB521ZS-30 Diodes Schottky Barrier Diode RB521ZS-30 0.38±0.03 D 0～0.03 ROHM : GMD2 JEDEC : JEITA : dot(year week factory) 0.27±0.03 0.3±0.05 zConstruction Silicon epitaxial planar 0.19±0.03 zFeatures 1) Ultra small mold type.（GMD2） 2) Low VF 3) High reliability 0.57±0.05 zDimensions (Unit : mm) 0.6±0.05 zApplications General rectification 0.3±0.03 zLand size figure (Unit : mm) zStructure 0.38 0.23 0.
PAGE 2
RB521ZS-30 Diodes zElectrical characteristic curves 100000000 Ta=75℃ 10 Ta=25℃ Ta=-25℃ 1 10000 Ta=25℃ 1000 Ta=-25℃ 100 1 0 100 200 300 400 500 600 700 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 0 30 AVE:305.7mV 290 8 7 6 5 4 3 AVE:1.19uA 2 280 20 1cyc 15 AVE:4.10A 10 5 0 10 Ct DISPERSION MAP Ifsm 8.3ms 8.3ms 1cyc 5 Ifsm t 5 0 10 1 100 Mounted on epoxy board 0.15 D=1/2 0.45 0.4 0.1 DC 0.
PAGE 3
RB521ZS-30 Diodes 0.3 0.25 t 0.2 DC T 0.15 VR D=t/T VR=15V Tj=150℃ D=1/2 0.1 0.05 Sin(θ＝180) 0 Io 0A 0V Io 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.3 t 0.25 0.2 T DC 0.15 VR D=t/T VR=15V Tj=150℃ D=1/2 0.1 0.05 Sin(θ＝180) 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curve (Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curve (Io-Tc) Rev.
PAGE 4
Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered.