Datasheet

RB521ZS-30
Diodes
Rev.C 2/3
zElectrical characteristic curves
10
100
1000
10000
100000
1000000
10000000
100000000
0102030
Ta=150℃
0.1
1
10
100
0 100 200 300 400 500 600 700
Ta=150℃
0
1
2
3
4
5
6
7
8
9
10
10
100
1000
10000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
1
10
0 102030
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
0
0.05
0.1
0.15
0 0.05 0.1 0.15 0.2
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(uA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
0
5
10
15
20
25
30
35
40
45
50
AVE:7.5pF
Ta=25℃
f=1MHz
VR=0V
n=10pcs
IFSM DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
0
5
10
15
20
25
30
AVE:4.10A
8.3ms
Ifsm
1cyc
0
5
10
110100
8.3ms
Ifsm
1cyc
8.3ms
0
5
10
110100
t
Ifsm
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
REVERSE POWER
DISSIPATION:P
R
(W)
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
f=1MHｚ
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0102030
DC
D=1/2
Sin(θ＝180)
280
290
300
310
320
330
AVE:305.7mV
Ta=25℃
VF=10mA
n=30pcs
Ta=125℃
Ta=-25℃
Ta=25℃
Ta=75℃
Ta=25℃
VR=10V
n=30pcs
AVE:1.19uA
DC
D=1/2
Sin(θ＝180)
1ms
IM=10mA IF=50mA
300us
time
Mounted on epoxy board