Datasheet

RB715F
Diodes
Rev.B 1/3
Shottky barrier diode
RB715F
zApplication
z
External dimensions (Unit : mm)
z
Lead size figure (Unit : mm)
Low current rectification
㩷
z
Features
1) Small mold type. (UMD3)
2) Low V
F
3) High reliability.
z
Construction
z
Structure
㪡㪜㪠㪫㪘㩷㪑㩷㪪㪚㪄㪎㪇
㪡㪜㪛㪜㪚㩷㪑㩷㪪㪦㪫㪄㪊㪉㪊
㪻㫆㫋㩷㩿㫐㪼㪸㫉㩷㫎㪼㪼㫂㩷㪽㪸㪺㫋㫆㫉㫐㪀
㪩㪦㪟㪤㩷㪑㩷㪬㪤㪛㪊
r
r
r
r
ฦ࡝࡯࠼ߣ߽
หኸᴺ

r
㧔㧕
㧔㧕
 
r
r
r
/KP
㨪
Each lead has same dimension
㪬㪤㪛㪊
㪇㪅㪐㪤㪠㪥㪅
㪇㪅㪏㪤㪠㪥㪅
㪈㪅㪍
㪇㪅㪍㪌
㪈㪅㪊
Silicon epitaxial planer
z
Taping dimensions (Unit : mm)
㪋㪅㪇㫧㪇㪅㪈
㪋㪅㪇㫧㪇㪅㪈
㪉㪅㪇㫧㪇㪅㪇㪌
㱢㪈㪅㪌㪌㫧㪇㪅㪇㪌
㪊㪅㪌㫧㪇㪅㪇㪌
㪈㪅㪎㪌㫧㪇㪅㪈
㪏㪅㪇㫧㪇㪅㪉
㱢㪇㪅㪌㫧㪇㪅㪇㪌
㪉㪅㪋㫧㪇㪅㪈
㪉㪅㪉㪌㫧㪇㪅㪈
䇭䇭䇭䇭㩷㪇
㪌㪅㪌㫧㪇㪅㪉
㪈㪅㪉㪌㫧㪇㪅㪈
㪉㪅㪋㫧㪇㪅㪈
㪇㪅㪊㫧㪇㪅㪈
㪇䌾㪇㪅㪈
z
Absolute maximum ratings (Ta=25qC)
Symbol Unit
V
RM
V
V
R
V
Io mA
I
FSM
mA
Tj
㷄
Tstg
㷄
z
Electrical characteristics (Ta=25qC)
Storage temperature -40 to +125
*1)Rating of per diode
ward current surge peak (60Hz
̠
1cyc) (*1) 200
ion temperature 125
everse voltage (DC) 40
verage rectified forward current 30
Parameter Limits
everse voltage (repetitive peak) 40R
R
A
For
Junct
(
Symbol Min. Typ. Max. Unit
V
F
--0.37V
IF=1mA
I
R
--1μA
VR=10V
Ct - 2.0 - pF
VR=1V f=1MHz
Conditions
Capacitance between terminals
fou
Parameter
orward voltageF
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