Datasheet

ManualsBrandsROHM SEMICONDUCTOR ManualsDiodesSchottky Diode

RB731XN

Diodes

Rev.B 1/3

Schottky barrier diode

RB731XN

zApplications

General rectification

zFeatures

Small power mold type.

(UMD6)

2) Low V

3) High reliability

zExternal dimensions (Unit : mm)

zLand size figure

ROHM : UMD6

JEITA : SC-88

JEDEC : SOT-363

dot (year week factory)

2.0±0.2

2.1±0.1

1.25±0.1

0.25±

0.1

0.05

各リードとも

同寸法

(5)(6)

(4)

1.3±0.1

0.65

(1) (3)(2)

0.15±0.05

0.9±0.1

0.7

0.1Min

0～0.1

Each lead has same dimension

UMD6

0.35

0.9

1.6

0.650.65

zStructure

zTaping dimensions (Unit : mm)

2.2±0.1

4.0±0.1

2.0±0.05

φ1.5±0.1

3.5±0.05

1.75±0.1

8.0±0.2

φ1.1±0.1

2.45±0.1

2.4±0.1

5.5±0.2

1.15±0.1

2.4±0.1

0.3±0.1

0～0.5

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

Limits

Unit

30 mA

FSM

200 mA

Tj 125

°C

Tstg

−40 to +125 °C

∗ Rating for each diode Io/3

Reverse voltage (repetitive peak)

Average rectified forward current

Forward current surge peak (60Hz 1cyc.)

Junction temperature

Storage temperature

Reverse voltage (DC)

∗

zElectrical characteristic (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Forward voltage

−

0.37 V I

=1mA

Reverse current

−

µA

=10V

Capacitance between terminal

−

=1V, f=1MHz

Summary of content (4 pages)

PAGE 1
RB731XN Diodes Schottky barrier diode RB731XN zApplications General rectification zLand size figure zExternal dimensions (Unit : mm) 0.65 2.0±0.2 各リードとも Each lead has same dimension 同寸法 0.25± 0.1 (6) (5) (1) (2) (4) 0.9 2.1±0.1 1.25±0.1 1.6 zFeatures 1) Small power mold type. (UMD6) 2) Low VF 3) High reliability 0.65 0.15±0.05 0.05 0～0.1 0.35 0.1Min (3) UMD6 0.65 0.65 0.7 1.3±0.1 0.9±0.
PAGE 2
RB731XN Diodes zElectrical characteristic curves Ta=75℃ 1 Ta=-25℃ Ta=25℃ 0.1 100 Ta=75℃ 10 1 Ta=25℃ 0.1 Ta=-25℃ 0.01 0.01 0.001 100 200 300 400 500 600 700 800 900 1000 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 5 280 270 260 0.8 0.7 0.6 0.5 0.4 0.3 AVE:0.083nA 0.2 PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 10 AVE:7.30A 35 6 5 4 3 2 1 0 AVE:2.52pF Ct DISPERSION MAP 10 Ifsm 8.3ms 8.3ms 1cyc 10 5 30 Ta=25℃ f=1MHz VR=0V n=10pcs 7 0 15 15 25 8 0.
PAGE 3
RB731XN Diodes 0.1 Per chip 0.08 Io 0A 0V t 0.06 DC T VR D=t/T VR=15V Tj=125℃ D=1/2 0.04 0.02 Sin(θ＝180) 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.1 Per chip 0.08 Io 0A 0V t 0.06 DC 0.04 D=1/2 0.02 Sin(θ＝180) T VR D=t/T VR=15V Tj=125℃ 0 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 Rev.
PAGE 4
Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered.