Datasheet

UM6K1N
Transistors
Rev.B 1/3
2.5V Drive Nch+Nch MOS FET
UM6K1N
zStructure zExternal dimensions (Unit : mm)
Silicon N-channel MOS FET
zFeatures
1) Two 2SK3018 transistors in a single UMT package.
2) The MOS FET elements are independent, eliminating
mutual interference.
3) Mounting cost and area can be cut in half.
4) Low On-resistance.
5) Low voltage drive (2.5V drive) makes this device ideal for
portable equipment.
zApplications
Interfacing, switching (30V, 100mA)
zPackaging specifications
zInner circuit
Package
Code
Taping
Basic ordering unit (pieces)
UM6K1N
TN
3000
Type
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and Tr2.>
∗1
∗2
Parameter
VV
DSS
Symbol
VV
GSS
mAI
D
mAI
DP
mWP
D
°CTch
°CTstg
Limits Unit
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
Continuous
Pulsed
∗1 Pw≤10µs, Duty cycle≤1%
∗2
With each pin mounted on the recommended lands.
30
150
−55 to +150
±20
±100
±400
150
zThermal resistance
Parameter
°C / W / TOTAL
Rth(ch-a)
Symbol Limits Unit
Channel to ambient
∗ With each pin mounted on the recommended lands.
833
°C / W / ELEMENT
1042
∗
(1)
∗
Gate
Protection
Diode
Tr1
Tr2
Gate
Protection
Diode
∗
∗
A protection diode has been built
in between the gate and the source
to protect against static electricity
when the product is in use.
Use the protection circuit when
rated voltages are exceeded.
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
(2) (3)
(4)(5)(6)
Each lead has same dimensions
UMT6
(
6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
(
1
)
0.65
(
4
)
(
3
)
(
2
)
(
5
)
1pin mark
Abbreviated symbol : K1