Datasheet

EMX1 / UMX1N / IMX1
Transistors
2/3
!
!!
!Electrical characteristics (Ta = 25°C)
Parameter Symbol
BV
CBO
BV CEO
BV EBO
I CBO
I EBO
h FE
V CE (sat)
Cob
Min.
60
50
7
−
−
120
−
−
−
−
−
−
−
−
−
2
−
−
−
0.1
0.1
560
0.4
3.5
VI
C = 50µA
I
C = 1mA
I
E = 50µA
V
CB = 60V
V
EB =7 V
V
CE = 6V, I C = 1mA
I
C /I B = 50mA/5mA
V
V
µA
µA
−
V
PF
Typ. Max. Unit Conditions
f T
− 180 −
V
CE = 12V, I E =− 2mA, f = 100MHz
V
CB = 12V, I E = 0A, f = 1MHz
MHz
∗
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Collector-emitter saturation voltage
Output capacitance
!
!!
!Packaging specifications
Package
Code TN T110
3000 3000
Taping
Basic ordering
unit (pieces)
UMX1N
T2R
8000
EMX1
IMX1
Type
!
!!
!Electrical characteristic curves
0
0.1
0.2
0.5
2
20
50
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
5
10
V CE = 6V
COLLECTOR CURRENT : I
C
(mA)
BASE TO EMITTER VOLTAGE : V BE (V)
Fig.1 Grounded emitter propagation
characteristics
25˚C
−55˚C
Ta=100˚C
0
20
40
60
80
100
0.4 0.8 1.2 1.6 2.00
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V CE (V)
0.05mA
0.10mA
0.15mA
0.25mA
0.30mA
0.35mA
0.20mA
Ta=25˚C
I B =0A
0.40mA
0.50mA
0.45mA
Fig.2 Grounded emitter output
characteristics ( I )
0
0
2
8
10
4 8 12 16
4
6
20
I B =0A
Ta=25˚C
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V CE (V)
3µA
6µA
9µA
12µA
15µA
18µA
21µA
24µA
27µA
30µA
Fig.3 Grounded emitter output
characteristics ( II )