PRODUCT SELECTION GUIDE LCD, Memory and Storage 2H 2011
Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks to powerful servers—and in a wide range of handheld devices such as smartphones and tablets. Samsung also delivers the industry’s widest line of storage products from the consumer to the enterprise level.
DRAM Pages 4-12 • • • • DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM • Mobile DRAM • Graphics DDR SDRAM • DRAM Ordering Information FLASH - SSD Pages 13-15 samsung.com/semi/flash • • • • SLC Flash MLC Flash SD and microSD Cards moviNAND™ (eMMC) • Solid State Drive • SATA SSD • Flash Ordering Information HIGH-SPEED SRAM Pages 16-20 samsung.
DDR3 SDRAM REGISTERED MODULES Density Voltage Organization Part Number 1GB 2GB 4GB 8GB 16GB 8GB 16GB 32GB 2GB 4GB 8GB 16GB 8GB 16GB 1.5V 1.5V 1.5V 1.5V 1.5V 1.5V 1.5V 1.5V 1.35V 1.35V 1.35V 1.35V 1.35V 1.35V 128Mx72 256Mx72 512Mx72 1Gx72 2Gx72 1Gx72 2Gx72 4Gx72 256Mx72 512Mx72 1Gx72 2Gx72 1Gx72 2Gx72 32GB 1.
Density Voltage Organization Part Number 1GB 1.5V 2GB 4GB 8GB 16GB 2GB 4GB 8GB 1.5V 1.5V 1.5V 1.5V 1.35V 1.35V 1.35V 128Mx72 256Mx72 512Mx72 1Gx72 2Gx72 256Mx72 512Mx72 1Gx72 16GB 1.
DDR3 SDRAM UNBUFFERED MODULES Density Voltage Organization 1GB 1.5V 128Mx64 2GB 1.5V 256Mx64 4GB 1.5V 512Mx64 8GB 1.
Density Voltage Organization Part Number 1Gb 1.5V 256M x4 1Gb 1.5V 128M x8 1Gb 1.5V 128M x16 2Gb 1.5V 512M x4 2Gb 1.5V 256M x8 2Gb 1.5V 128M x16 4Gb 1.5V 1G x4 4Gb 1.5V 512M x8 1Gb 1.35V 256M x4 1Gb 1.35V 128M x8 2Gb 1.35V 512M x4 2Gb 1.35V 256M x8 4Gb 1.35V 1G x4 4Gb 1.
DDR2 SDRAM UNBUFFERED MODULES Density Organization Part Number Composition Compliance Speed (Mbps) Rank Production 1GB 128Mx64 M378T2863FBS-C(E6/F7/E7) (128M x8)*8 Lead free 667/800 1 Now 2GB 256Mx64 M378T5663FB3-C(E6/F7/E7) (128M x8)*16 Lead free 667/800 2 Now Notes: E6 = PC2-5300 (DDR2-667 @ CL=5) E7 = PC2-6400 (DDR2-800 @ CL=5) F7 = PC2-6400 (DDR2-800 @ CL=6) Voltage = 1.
Type Density Organization 512Mb MDDR Package Power Production 32Mx16 K4X51163PK-FG(1) 60-FBGA 1.8V Now 16Mx32 K4X51323PK-8G(1) 90-FBGA 1.8V Now 1Gb 32Mx32 K4X1G323PF-8G(1) 90-FBGA 1.8V Now 2Gb 64Mx32 K4X2G323PC-8G(1) 90-FBGA 1.8V Now 4Gb 2Gb 4Gb LPDDR2 8Gb 16Gb Notes: Part Number (1) Speed: Mobile-SDR 60: 166MHz, CL3 75: 133MHz, CL3 DRAM Mobile DRAM Components x32 (2CS, 2CKE) K4X4G303PC-AG(1) 168-FBGA, 12x12 PoP, DDP 1.
COMPONENT DRAM ORDERING INFORMATION 1 2 3 4 5 6 7 8 9 10 11 K 4 T XX XX X X X X X XX Speed Temp & Power Package Type Revision Interface (VDD, VDDQ) Number of Internal Banks SAMSUNG Memory DRAM DRAM Type Density Bit Organization 1. Memory (K) 2. DRAM: 4 3.
1 2 3 4 5 6 7 8 9 10 11 K 4 T XX XX X X X X X XX Speed Temp & Power Package Type Revision Interface (VDD, VDDQ) Number of Internal Banks SAMSUNG Memory DRAM DRAM Type Density Bit Organization XDR DRAM J: BOC(LF) P: BOC Mobile DRAM Leaded / Lead Free G/A: 52balls FBGA Mono R/B: 54balls FBGA Mono X /Z: 54balls BOC Mono J /V: 60(72)balls FBGA Mono 0.5pitch L /F: 60balls FBGA Mono 0.
Module DRAM Ordering Information 1 2 3 4 5 6 7 8 9 10 11 12 13 M X XX T XX X X X X X X XX X AMB Vendor Speed Temp & Power PCB Revision Package Component Revision SAMSUNG Memory DIMM Data bits DRAM Component Type Depth Number of Banks Bit Organization 1. Memory Module: M 2. DIMM Type 3: DIMM 4: SODIMM 3.
SLC Flash MOQ Density 128Gb ODP 64Gb QDP 16Gb Based 32Gb DDP 16Gb Mono 16Gb QDP 4Gb Based 8Gb DDP 4Gb Mono 2Gb Based 1Gb Based 2Gb Mono 1Gb Mono Part Number Package Type Org. Vol(V) Tray T/R -xxxx0xx -xxx0Txx Status K9QDGD8S5M-HCB* BGA x8 1.8 960 1000 M/P K9QDGD8U5M-HCB* BGA x8 3.3 960 1000 M/P K9QDG08U5M-HCB* BGA x8 3.3 960 1000 M/P K9WCGD8S5M-HCB* BGA x8 1.8 960 1000 M/P K9WCGD8U5M-HCB* BGA x8 3.3 960 1000 M/P K9WCG08U5M-HCB* BGA x8 3.
SD and MicroSD FLASH CARDS Application Density 2GB 4GB SD Cards 8GB 16GB 32GB 2GB 4GB uSD Cards 8GB 16GB 32GB Please contact your local Samsung sales representative for part numbers and latest product offerings. moviNAND™ (eMMC) Density Part Number Package Type Org. Vol (V) Status 2GB KLM2G1HE3F-B001xxx 11.5x13 x8 1.8/3.3 C/S-July 4GB KLM4G1FE3A-A001xxx 12x16 x8 1.8/3.3 C/S-July 8GB KLM8G2FEJA-A002xxx 12x16 x8 1.8/3.3 C/S MP 16GB KLMAG4FEJA-A002xxx 12x16 x8 1.8/3.
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 K 9 X X X X X X X X - X X X X Pre-Program Version Customer Bad Block Temp Package --Generation Mode SAMSUNG Memory NAND Flash Small Classification Density Density Organization Organization Vcc 1. Memory (K) 2. NAND Flash : 9 3.
Synchronous SRAM SPB & SB Density Organization 2Mx18 36Mb 1Mx36 1Mx36 18Mb 1Mx18 256Kx36 8Mb 512Kx18 128Kx36 4Mb 256Kx18 NOTES: 16 Part Number Package Operating Mode Vdd (V) Access Time tCD (ns) Cycle Time (MHz) I/O Voltage (V) Production Status Comments K7A321830C 100-TQFP SPB 3.3, 2.5 3.1 200 3.3, 2.5 Mass Production 2E1D K7B321835C 100-TQFP SB 3.3, 2.5 7.5 118 3.3, 2.5 Mass Production K7A323630C 100-TQFP SPB 3.3, 2.5 3.1 200 3.3, 2.
Type Density 72Mb 36Mb 18Mb NtRAM 8Mb 4Mb Organization Part Number Package Operating Mode Vdd (V) Access Time tCD (ns) Speed tCYC (MHz) I/O Voltage (V) Production Status 2Mx36 K7N643645M 100-TQFP SPB 2.5 2.6, 3.5 250, 167 2.5 Mass Production 4Mx18 K7N641845M 100-TQFP SPB 2.5 2.6, 3.5 250, 167 2.5 Mass Production 1Mx36 K7N323631C 100-TQFP, 165FBGA SPB 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 Mass Production 2Mx18 K7N321831C 100-TQFP, 165FBGA SPB 3.3, 2.5 2.6, 3.
DDR Synchronous SRAM Type Density 16Mb DDR 8Mb Organization Part Number Package Vdd (V) Access Time tCD (ns) Cycle Time I/O Voltage (V) Production Status 512Kx36 K7D163674B 153-BGA 1.8~2.5 2.3 330, 300 1.5~1.9 Mass Production 1Mx18 K7D161874B 153-BGA 1.8~2.5 2.3 330, 300 1.5~1.9 Mass Production 256Kx36 K7D803671B 153-BGA 2.5 1.7/1.9/2.1 333, 330, 250 1.5 (Max 2.0) Not for new designs 512Kx18 K7D801871B 153-BGA 2.5 1.7/1.9/2.1 333, 330, 250 1.5 (Max 2.
QDR SYNCHRONOUS SRAM Density Organization 1Mx18 QDR I 18Mb 512Kx36 8Mx9 72Mb 4Mx18 2Mx36 4Mx9 QDR II 36Mb 2Mx18 1Mx36 2Mx9 18Mb 1Mx18 Part Number Package Vdd (V) Access Time tCD (ns) Cycle Time I/O Voltage (V) Production Status Comments K7Q161862B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.8 Mass Production QDR I - 2B K7Q161864B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.8 Mass Production QDR I - 4B K7Q163662B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.
Synchronous SRAM Ordering Information 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 K 7 X X X X X X X X - X X X X X Packaging Type Speed Speed Temp, Power Package --Generation Vcc, Interface, Mode SAMSUNG Memory Sync SRAM Small Classification Density Density Organization Organization Vcc, Interface, Mode 1. Memory (K) 2. Sync SRAM: 7 3.
MCP: NAND + MDDR Memory NAND Density DRAM Density/Organization Voltage (NAND-DRAM) Package 256Mb (x16) 1.8V - 1.8V 130FBGA 512Mb (x16) 1.8V - 1.8V 130FBGA 2Gb (x16) 1Gb (x16) 1.8V - 1.8V 130FBGA/137FBGA 2Gb (x16) 1Gb (x32) 1.8V - 1.8V 130FBGA/137FBGA 2Gb (x16) 2Gb (x32) 1.8V - 1.8V 130FBGA 2Gb (x32) 1.8V - 1.8V 137FBGA 1Gb (x16) NAND & MDRAM 4Gb (x16) 4Gb*2 (x16) 2Gb*2 (x32, 2CS/2CKE) 1.8V - 1.8V 137FBGA 2Gb*2 (x32, 2CS/2CKE) 1.8V - 1.
3.5" Hard Disk Drives Family F3 F3R F4EG-3 EcoGreen F3 EcoGreen F2 (F2EG) 22 Capacity (GB) RPM Interface Buffer Sector Model 160 7200 SATA 3.0 Gbps 8 512 HD164GJ 250 7200 SATA 3.0 Gbps 8 512 HD254GJ 320 7200 SATA 3.0 Gbps 8 512 HD324HJ 160 7200 SATA 3.0 Gbps 16 512 HD163GJ 250 7200 SATA 3.0 Gbps 16 512 HD253GJ 320 7200 SATA 3.0 Gbps 16 512 HD323HJ 500 7200 SATA 3.0 Gbps 16 512 HD502HJ 750 7200 SATA 3.0 Gbps 32 512 HD754JJ 1TB 7200 SATA 3.
2.5" Hard Disk Drives Family M8 M7E M7 MT2 MP4 M5P Capacity (GB) RPM Interface Buffer 160 5400 SATA 3.0 Gbps 8 Sector Model HN-M160MBB 250 5400 SATA 3.0 Gbps 8 HN-M250MBB 320 5400 SATA 3.0 Gbps 8 HN-M320MBB 500 5400 SATA 3.0 Gbps 8 HN-M500MBB 640 5400 SATA 3.0 Gbps 8 HN-M640MBB 750 5400 SATA 3.0 Gbps 8 HN-M750MBB 1TB 5400 SATA 3.0 Gbps 8 160 5400 SATA 3.0 Gbps 8 512 HM161GI 250 5400 SATA 3.0 Gbps 8 512 HM251HI 320 5400 SATA 3.
Blu-ray H/H Interface Speed SATA BD Combo 12X Type Loading H/H Tray Lightscribe Model X TS-HB43A / SH-B123A O TS-HB43L / SH-B123L Lightscribe Model X SN-B043D O SN-B043P Blu-ray Slim Interface Speed Type Loading SATA BD Combo 4X Slim Tray Blu-ray writer Slim external Interface Speed Type Loading Lightscribe Model USB 2.0 BD Writer 6X Slim Tray X SE-506AB Blu-ray Combo Slim External Interface Speed Type Loading Lightscribe Model USB 2.
DID Product Classification E-DID: Exclusive DID Super Narrow Panoramic display Wall-mounted Narrow P-DID: Performance DID » Thin/Light » (Edge LED) » Narrow » Black Bezel B-DID: Basic DID Outdoor: High Luminance » 1500 – 2000nit Large Format Display » 70” / 82” Landscape / Portrait convertible Why DID Instead of TV? Commercial (DID) Consumer (TV) Warranty 18 months to 2 years 90 days to 1 year Reliability Designed for continuous use in different environments Turned on for 20 hours + Variet
Samsung Digital Information Display (DID) Panel Lineup Type Current Model New Model Size Model resolution Bezel Backlight Brightness (typical) Contrast Ratio Response Time Frequency MP* Comment LTI220MT01 22" WXGA Narrow None N/A 500:1 8ms 60Hz Now B&W Transparent LCD LTI220MT02 22" WXGA Narrow None N/A 500:1 8ms 60Hz Now Color Transparent LCD LTI430LA01-0 43" 1920X480 Narrow CCFL 700 nits 3,000:1 8ms 60Hz Now Panoramic LTI430LA02 43" 1920X480 Narrow E-LED
Tablets Size 7" 10.1" PN Mode Resolution H(RGB) V Aspect Ratio PPI Brightness (nits) MP LTN070NL01 PLS WSVGA 1024 600 16:10 170 400 Now LTN070AL01-0 PLS WXGA 1280 800 16:10 216 400 9/E, 2011 LTN101AL03-0 PLS WXGA 1280 800 16:10 149 400 Now Notebooks / Personal Computers Size 10.1" 11.
Memory DRAM Flash SRAM MCP System LSI ASICs APs Display Drivers Imaging ICs Foundry Storage Solid State Drives Hard Drives Optical Disc Drives LCD Panels Displays Monitors Smartphones Tablets TVs Samsung Semiconductor, Inc. 3655 North First Street San Jose, CA 95134-1713 samsung.com/us/oem-solutions Disclaimer: The information in this publication has been carefully checked and is believed to be accurate at the time of publication.
