Datasheet

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DDR3 SDRAM
Rev. 1.03 July 2009
Unbuffered DIMM
16.0 Electrical Characteristics and AC timing
(0 °C<T
CASE
≤95 °C, V
DDQ
= 1.5V ± 0.075V; V
DD
= 1.5V ± 0.075V)
16.1 Refresh Parameters by Device Density
Note :
1. Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine if DDR3 SDRAM devices support the following options or
requirements referred to in this material.
16.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
16.3 Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin
DDR3 SDRAM Speed Bins include tCK, tRCD, tRP, tRAS and tRC for each corresponding bin.
DDR3-1066 Speed Bins
Parameter Symbol 1Gb 2Gb 4Gb 8Gb Units Note
All Bank Refresh to active/refresh cmd time tRFC 110 160 300 350 ns
Average periodic refresh interval tREFI
0 °C ≤ T
CASE
≤ 85°C
7.8 7.8 7.8 7.8 µs
85 °C < T
CASE
≤ 95°C
3.9 3.9 3.9 3.9 µs 1
Speed DDR3-1066
DDR3-1333 DDR3-1600
Units Note
Bin (CL - tRCD - tRP) 7-7-7 9-9-9 11-11-11
Parameter min min min
CL 7911tCK
tRCD 13.13 13.5 13.75 ns
tRP 13.13 13.5 13.75 ns
tRAS 37.5 36 35 ns
tRC 50.63 49.5 48.75 ns
tRRD 7.5 6.0 6.0 ns
tFAW 37.5 30 30 ns
Speed DDR3-1066
Units NoteCL-nRCD-nRP 7 - 7 - 7
Parameter Symbol min max
Internal read command to first data tAA 13.125 20 ns
ACT to internal read or write delay time tRCD 13.125 - ns
PRE command period tRP 13.125 - ns
ACT to ACT or REF command period tRC 50.625 - ns
ACT to PRE command period tRAS 37.5 9*tREFI ns 8
CL = 6
CWL = 5 tCK(AVG) 2.5 3.3 ns 1,2,3,6
CWL = 6 tCK(AVG) Reserved ns 1,2,3,4
CL = 7
CWL = 5 tCK(AVG) Reserved ns 4
CWL = 6 tCK(AVG) 1.875 <2.5 ns 1,2,3,4
CL = 8
CWL = 5 tCK(AVG) Reserved ns 4
CWL = 6 tCK(AVG) 1.875 <2.5 ns 1,2,3
Supported CL Settings 6,7,8 nCK
Supported CWL Settings 5,6 nCK