Datasheet

Rev. 1.0 July 2008
DDR2 SDRAM
RDIMM
18 of 26
(V
DD
=1.8V, V
DDQ
=1.8V, TA=25
o
C)
* DM is internally loaded to match DQ and DQS identically.
Parameter
Symbol
Min Max Min Max Min Max Min Max
Units
Part-Number
M393T6553GZ3
M393T6553GZA
M393T2953GZ3
M393T2953GZA
M393T2950GZ3
M393T2950GZA
M393T5750GZ3
M393T5750GZA
Input capacitance, CK and CK CCK - 11 - 11 - 11 - 11
pF
Input capacitance, CKE and CS CI1 - 12 - 12 - 12 - 12
Input capacitance, Address, RAS,CAS,WE CI2 - 12 - 12 - 12 - 12
Input/output capacitance, DQ, DM, DQS, DQS CIO - 10 - 10 - 10 - 10
Speed DDR2-800(F7) DDR2-667(E6) DDR2-533(D5) DDR2-400(CC)
UnitsBin(CL - tRCD - tRP) 6 - 6 - 6 5 - 5 - 5 4 - 4 - 4 3 - 3 - 3
Parameter min max min max min max min max
tCK, CL=3 - - 5 8 5 8 5 8 ns
tCK, CL=4 3.75 8 3.75 8 3.75 8 5 8 ns
tCK, CL=5 3 8 3 8 3.75 8 - - ns
tCK, CL=6 2.5 8 - - - - - - ns
tRCD 15 - 15 - 15 - 15 - ns
tRP 15 - 15 - 15 - 15 - ns
tRC 60 - 60 - 60 - 55 - ns
tRAS 45 70000 45 70000 45 70000 40 70000 ns
13.0 Electrical Characteristics & AC Timing for DDR2-800/667/533/400
Parameter Symbol 256Mb 512Mb 1Gb 2Gb 4Gb Units
Refresh to active/Refresh command time tRFC 75 105 127.5 195 327.5 ns
Average periodic refresh interval tREFI
0 °C ≤ T
CASE
≤ 85°C
7.8 7.8 7.8 7.8 7.8
µs
85 °C < T
CASE
≤ 95°C
3.9 3.9 3.9 3.9 3.9
µs
(0 °C < T
OPER
< 95 °C; V
DDQ
= 1.8V + 0.1V; V
DD
= 1.8V + 0.1V)
13.1 Refresh Parameters by Device Density
13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
12.0 Input/Output Capacitance