User Manual

TriFlash Interface Description

READ_BLK_MISALIGN—Defines if the data block to be read by one command can be spread over more than

one physical block of the memory device. The size of the memory block is defined in READ_BL_LEN.

READ_BLK_MISALIGN=0 signals that crossing physical block boundaries is invalid.

READ_BLK_MISALIGN=1 signals that crossing physical block boundaries is allowed.

DSR_IMP—Defines if the configurable driver stage is integrated on the device. If set, a driver stage register (DSR)

must be implemented also.

Table 3-16. DSR Implementation Code Table

DSR_IMP DSR Type

0 No DSR implemented

1 DSR implemented

C_SIZE (Device Size)—This parameter is used to compute the device capacity (does not include security protected

area). The memory capacity of the device is computed from the entries C_SIZE, C_SIZE_MULT and

READ_BL_LEN as follows:

memory capacity = BLOCKNR * BLOCK_LEN

Where:

BLOCKNR = (C_SIZE+1) * MULT

MULT = 2

C_SIZE_MULT+2

(C_SIZE_MULT < 8)

BLOCK_LEN = 2

READ_BL_LEN

(READ_BL_LEN < 12)

Therefore, the maximum capacity that can be coded is 4096*512*2048 = 4 GBytes. Example: A four MByte device

with BLOCK_LEN = 512 can be coded with C_SIZE_MULT = 0 and C_SIZE = 2047.

VDD_R_CURR_MIN, VDD_W_CURR_MIN—The maximum values for read and write currents at the minimal

VDD power supply are coded as follows:

Table 3-17. V

Minimum Current Consumption

VDD_R_CURR_MIN

VDD_W_CURR_MIN

Code For Current Consumption @ V

2:0 0=0.5mA; 1=1mA; 2=5mA; 3=10mA; 4=25mA;

5=35mA; 6=60mA; 7=100mA

VDD_R_CURR_MAX, VDD_W_CURR_MAX—The maximum values for read and write currents at the

maximum VDD power supply are coded as follows:

Table 3-18. V

Maximum Current Consumption

VDD_R_CURR_MAX

VDD_W_CURR_MAX

Code For Current Consumption @ V

2:0 0=1mA; 1=5mA; 2=10mA; 3=25mA; 4=35mA;

5=45mA; 6=80mA; 7=200mA

C_SIZE_MULT (Device Size Multiplier)—This parameter is used for coding a factor MULT for computing the

total device size (see ‘C_SIZE’). The factor MULT is defined as 2

C_SIZE_MULT+2